Capacitor Supporting Structure V-Shape Profile
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Solution Overview
Problem
Existing semiconductor capacitor structures face challenges with the formation of a pointed top surface on the upper support layer, leading to increased risk of corona discharge and peeling or falling off of the capacitor dielectric layer due to gaps between the bottom electrode and the dielectric layer.
Innovation Solution
A semiconductor capacitor structure is developed with a supporting structure that has a V-shaped indentation on its top surface, ensuring it is higher than the cylinder-shaped bottom electrode, preventing gaps and corona discharge, and a method involving specific etching processes to form this structure, including oxygen treatment and chlorine etching to create a concave upper surface and oblique sidewall.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a supporting structure is formed to support the sidewall of the cylinder-shaped bottom electrode, then the bottom electrode can avoid collapse, but the top surface of the upper support layer forms a pointed shape increasing corona discharge risk
Solution Approach 1:
The supporting structure is designed with different local geometries: a substantially vertical sidewall portion for structural support and a top surface portion with reduced height to eliminate the pointed shape. This local differentiation allows the structure to simultaneously provide mechanical support while avoiding corona discharge at the top surface.
Solution Approach 2:
The supporting structure is segmented into functionally distinct portions: a sidewall support portion that provides mechanical stability to the bottom electrode, and a top surface portion with reduced height that eliminates the pointed shape. This segmentation allows each portion to optimize its specific function without compromising the other.
2Stability of the object's composition
If a supporting structure is formed to support the sidewall of the cylinder-shaped bottom electrode, then the bottom electrode can avoid collapse, but gaps form between the bottom electrode and capacitor dielectric layer causing peeling or falling off
Solution Approach 1:
The supporting structure provides localized support at the sidewall region where the bottom electrode needs mechanical stability, while the reduced top surface height ensures proper contact with the capacitor dielectric layer. This local differentiation eliminates gaps that would cause adhesion failures.
Solution Approach 2:
The supporting structure acts as an intermediary element that transfers mechanical support to the bottom electrode through its sidewall portion while maintaining proper interface contact with the capacitor dielectric layer through its reduced top surface portion, thereby ensuring reliable adhesion.
3Strength
If the top surface of the upper support layer is formed at a higher height to support the bottom electrode sidewall, then structural support is provided, but the pointed shape increases corona discharge risk
Solution Approach 1:
The supporting structure implements local quality differentiation by providing vertical sidewall support at the lower portion for structural strength while reducing the height of the top surface portion to eliminate corona discharge risk. Each local region is optimized for its specific functional requirement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces the risk of corona discharge and prevents the peeling or falling off of the capacitor dielectric layer by ensuring intimate contact between the supporting structure and the bottom electrode, maintaining the height of the bottom electrode and improving capacitance value.
Implementation Method 1
a supporting structure horizontally supporting a sidewall of the cylinder-shaped bottom electrode
Implementation Method 2
a capacitor dielectric layer conformally covering the cylinder-shaped bottom electrode and the supporting structure
Implementation Method 3
a top electrode covering the capacitor dielectric layer
Data Source
AI summary
A capacitor structure includes a substrate having thereon a storage node contact, a cylinder-shaped bottom electrode disposed on the storage node contact, a supporting structure horizontally supporting a sidewall of the cylinder-shaped bottom electrode, a capacitor dielectric layer conformally covering the cylinder-shaped bottom electrode and the supporting structure, and a top electrode covering the capacitor dielectric layer. The supporting structure has a top surface that is higher than that of the cylinder-shaped bottom electrode. The top surface of the supporting structure has a V-shaped sectional profile.