Capacitor Switching Structure Surface Repair for Short-Circuit Isolation
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Solution Overview
Problem
Existing manufacturing processes lead to defects on the surface of capacitor bases and short circuits between adjacent capacitor switching structures in semiconductor structures, affecting their electrical properties.
Innovation Solution
A method involving forming a capacitor base with isolation layers between switching structures, etching the isolation layer to expose the structures, oxidizing the surface to form an oxide layer, and then removing the oxide layer to eliminate defects and prevent short circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing manufacturing processes are used to form capacitor base with switching structures, then manufacturing simplicity is maintained, but defects appear on capacitor base surface and short circuits occur between adjacent structures
Solution Approach 1:
The patent applies preliminary action by performing surface oxidation before final processing. The oxide layer is formed in advance on the capacitor base surface and switching structure surfaces, preparing the surface for subsequent defect removal and short circuit prevention operations, thereby improving surface quality and electrical properties
Solution Approach 2:
The patent converts the potentially harmful oxide layer into a beneficial tool. The oxide layer is intentionally formed to cover and protect surfaces during processing, then selectively removed to eliminate defects and prevent short circuits, turning what could be a contaminant into a protective and corrective mechanism
2Reliability
If isolation layer is kept covering capacitor switching structures, then structural protection is provided, but short circuits between adjacent structures cannot be prevented
Solution Approach 1:
The patent applies local quality by selectively removing the oxide layer from specific areas. The isolation layer and oxide layer are removed only from regions where capacitor switching structures are located, while maintaining oxide coverage in other areas, thereby achieving electrical isolation prevention without requiring complete removal of protective layers
Solution Approach 2:
The patent uses preliminary action by forming the oxide layer before final structure completion. This pre-formed oxide layer serves as a temporary protective barrier during manufacturing, and its selective removal at the appropriate stage enables short circuit prevention without adding complex post-processing steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces defects on the capacitor switching structure surfaces and prevents short circuits, thereby improving the electrical properties of the semiconductor structure.
Implementation Method 1
oxidizing a surface of the capacitor base exposing the capacitor switching structures, and forming an oxide layer
Data Source
AI summary
The present application provides a semiconductor structure and a forming method thereof. The method of forming the semiconductor structure includes: forming a capacitor base, the capacitor base including a plurality of capacitor switching structures and an isolation layer located between adjacent capacitor switching structures and covering top surfaces of the capacitor switching structures; removing the isolation layer covering the top surfaces of the capacitor switching structures, and exposing the capacitor switching structures; oxidizing a surface of the capacitor base exposing the capacitor switching structures, and forming an oxide layer; and removing the oxide layer, and exposing the capacitor switching structures.