Capacitor Electrode Structure for High-Aspect-Ratio Via Integrity

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Solution Overview

Problem

The reduction in dimensions and increase in aspect ratio of conductive vias in electronic elements, such as capacitors, leads to damage or breakage of the thin conductive layer during etching, causing short circuits between adjacent vias.

Innovation Solution

A conductive structure is manufactured with a base material comprising multiple support layers and electrode layers, where the electrode layers are formed with consistent thicknesses and protected by buffer materials during etching to prevent damage, ensuring consistent thickness and integrity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the dimensions of conductive vias are reduced and aspect ratio is increased to achieve high integration density, then the integration density is improved, but the conductive layer becomes damaged or broken during etching causing short circuits

Engineering Contradiction:
Improveintegration densityVSAvoidconductive layer integrity
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

A protective coating is deposited on the conductive layer before the etching process. This preliminary protective action prevents the conductive layer from damage during subsequent etching operations, allowing thin conductive layers to be formed without breakage while maintaining high integration density

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

A protective coating material is introduced as an intermediary between the conductive layer and the etching process. This intermediary layer protects the conductive material from direct exposure to etchants, preventing short circuits while allowing the etching to proceed for via formation

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20260052712A1Conductive structure including capacitor structure and method for manufacturing the same
Publication Date: 2026.02.19 NAN YA TECH
  • US20260052712A1 patent drawing
  • US20260052712A1 patent drawing
  • US20260052712A1 patent drawing

AI summary

A conductive structure and a method of manufacturing a conductive structure are provided. The conductive structure includes a first support layer, a second support layer, a first electrode layer, an intermediate dielectric layer and a second electrode layer. The second support layer is disposed over and spaced apart from the first support layer. The first electrode layer includes a first part. The first part includes a first portion contacting the first support layer and a second portion contacting the second support layer. A thickness of the first portion is substantially equal to a thickness of the second portion. The intermediate dielectric layer is disposed on the first electrode layer. The second electrode layer is disposed on the intermediate dielectric layer.