Capacitors With Oxidized TiOxNy Electrodes
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Solution Overview
Problem
The increasing density of integrated circuitry poses a challenge in maintaining high storage capacitance in capacitors due to decreasing capacitor size, where parameters that enhance capacitance often lead to undesirable attributes like increased leakage and reduced breakdown voltage.
Innovation Solution
The formation of capacitors using TiN-comprising materials, where TiN is oxidized to form TiOxNy layers with specific resistivity, and the use of HfO2 as a dielectric, along with metal-insulator-metal configurations, to optimize capacitance while maintaining structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If capacitor size is decreased to increase integrated circuitry density, then device integration is improved, but storage capacitance deteriorates
Solution Approach 1:
The patent transitions from planar capacitor geometry to vertically stacked three-dimensional capacitor structures. Multiple capacitor layers are stacked vertically above transistor structures, utilizing the vertical dimension to increase capacitance without occupying additional horizontal area, thereby maintaining high integration density while achieving required storage capacitance
Solution Approach 2:
The capacitor structures are nested within and around transistor structures. The capacitors are formed using the transistor source/drain regions as part of the capacitor electrode structure, creating a nested configuration where capacitor and transistor functions are integrated within the same vertical space, maximizing space utilization
2Quantity of substance
If parameters are adjusted to increase capacitance, then storage capacitance is improved, but leakage increases and breakdown voltage decreases
Solution Approach 1:
The patent employs composite dielectric structures consisting of multiple dielectric layers with different material compositions and properties. High-k dielectric materials are combined with low-k dielectric materials in a stacked configuration, where each layer is optimized for specific functions: high-k layers provide high capacitance density while low-k layers provide low leakage and high breakdown voltage, achieving both high capacitance and high reliability
Solution Approach 2:
Different regions of the capacitor structure use different dielectric materials optimized for local requirements. The dielectric layers adjacent to electrodes use materials optimized for interface quality and low leakage, while intermediate layers use high-k materials for maximum capacitance, and outer layers use protective materials for breakdown voltage enhancement
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in capacitors with enhanced capacitance and increased breakdown voltage, effectively addressing the trade-offs in capacitor design and fabrication.
Implementation Method 1
TiN is oxidized to form TiOxNy layers with specific resistivity
Implementation Method 2
the use of HfO2 as a dielectric
Data Source
AI summary
A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.