Chemically Amplified Resist for Dimensional Control

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Solution Overview

Problem

The complexity of semiconductor device fabrication increases with decreasing feature sizes, making it challenging to form reliable semiconductor devices at smaller scales due to issues like chemical flare during the lithography process, which affects the resolution and dimensional control of patterns.

Innovation Solution

The use of a chemically amplified resist (CAR) material with a photoacid generator (PAG) and quencher (Q) groups bonded to a polymer backbone or linker, which reduces the evaporation and sublimation of acid and base, preventing the chemical flare phenomenon and improving critical dimensional control.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional lithography processes are used with decreasing feature sizes, then manufacturing complexity increases, but chemical flare occurs causing poor resolution and dimensional control

Engineering Contradiction:

Improvedimensional controlVSAvoidprocessing complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent modifies the chemical parameters of the resist material by incorporating specific PAG and quencher groups with particular molecular structures and ratios. This changes the chemical reaction parameters during lithography to suppress chemical flare while maintaining pattern fidelity, directly addressing the dimensional control issue without increasing process complexity

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent uses composite resist materials containing multiple functional components (PAG groups, quencher groups, polymer backbone) working together. The synergistic interaction between these components suppresses chemical flare phenomenon while enabling precise dimensional control at smaller feature sizes

Inventive Principle:

Principle #40Composite materials

2Reliability

If conventional resist materials are used, then chemical flare occurs during lithography, but using chemically amplified resist with bonded PAG and quencher groups prevents this

Engineering Contradiction:

Improvepattern resolutionVSAvoidchemical flare

Core Design Contradiction:

ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent converts the potentially harmful chemical flare effect into a beneficial outcome by using the acid-base reaction between PAG and quencher groups in a controlled manner. The bonded structure ensures that the chemical reaction produces the desired pattern transfer while suppressing unwanted chemical flare, turning a harmful phenomenon into a useful patterning mechanism

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The quencher groups act as intermediaries that mediate the chemical reaction between PAG and the resist polymer. By bonding the quencher groups to the polymer backbone, they control the acid diffusion and reaction process, preventing chemical flare while enabling precise pattern formation

Inventive Principle:

Principle #24Intermediary (Mediator)

3Quantity of substance

If resist material evaporates or sublimates during processing, then solid content is lost, but using bonded PAG and quencher groups reduces this loss

Engineering Contradiction:

Improvesolid contentVSAvoidresist material loss

Core Design Contradiction:

Quantity of substanceVSLoss of substance

Solution Approach 1:

The patent incorporates stabilizing chemical structures (bonded PAG and quencher groups) into the resist material beforehand to prevent evaporation and sublimation losses during subsequent processing. This pre-built molecular structure acts as a cushion against material loss, ensuring sufficient solid content remains for accurate pattern formation

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the resolution and dimensional control of semiconductor patterns, reducing the loss of solid content in the resist layer and preventing the chemical flare issue, thereby improving the reliability and precision of semiconductor device fabrication.

Implementation Method 1

reduces the evaporation and sublimation of acid and base

Methodology Applied

Scientific EffectEvaporation: Evaporation

Implementation Method 2

reduces the evaporation and sublimation of acid and base

Methodology Applied

Scientific EffectSublimation: Sublimation

Implementation Method 3

The resist layer is patterned by performing an exposure process, a baking process and an etching process. The resist layer includes a linker, at least one of photoacid generator (PAG) group and a quencher (Q) group bonded to the linker

Methodology Applied

Scientific EffectPhotochemical reaction: Photopolymerisation

Data Source

PatentUS20230251578A1Method for forming semiconductor structure

Publication Date: 2023.08.10 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A method for forming a semiconductor device structure is provided. The method includes forming a resist layer over a material layer. The method also includes exposing a portion of the resist layer. The resist layer comprises an acid-labile group (ALG), a polar unit (PU) and a phenyl group. The method further includes developing the resist layer to form a patterned resist layer. In addition, the method includes forming a doped region in the material layer by using the patterned resist layer as a mask.