Carbide Substrate Reflective Layer Adhesion

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Solution Overview

Problem

Existing semiconductor light emitting elements face challenges in enhancing light takeoff efficiency and adhesion between the reflective layer and the carbide substrate, leading to potential issues with reflectivity and heat dissipation.

Innovation Solution

A method involving a reflective layer with silver as the main component, combined with oxide or nitride particles, is applied to the carbide substrate, enhancing adhesion and maintaining high reflectivity by forming a pseudo transition layer at the interface, which suppresses crystal grain growth and void generation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If a reflective layer is provided on the carbide substrate to improve light takeoff efficiency, then reflectivity is improved, but adhesion between the reflective layer and substrate deteriorates

Engineering Contradiction:
Improvelight takeoff efficiencyVSAvoidadhesion between reflective layer and substrate
Core Design Contradiction:
Illumination intensityVSReliability

Solution Approach 1:

An adhesive layer comprising Ti, Al, or alloy thereof is introduced between the carbide substrate and the reflective layer (Ag, Al, or their alloys). This intermediary layer serves as a bridge that chemically bonds to both the substrate and the reflective layer, resolving the adhesion problem while preserving the optical reflection function.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The structure employs composite material design with multiple layers: carbide substrate + adhesive layer (Ti/Al alloy) + reflective layer (Ag/Al alloy). Each layer is optimized for its specific function - the substrate for mechanical support, the adhesive layer for bonding, and the reflective layer for optical reflection - creating a composite structure that achieves both strong adhesion and high reflectivity.

Inventive Principle:
Principle #40Composite materials

2Illumination intensity

If the reflective layer is made thicker to improve reflectivity, then light takeoff efficiency is improved, but heat dissipation capability deteriorates

Engineering Contradiction:
ImprovereflectivityVSAvoidheat dissipation
Core Design Contradiction:
Illumination intensityVSTemperature

Solution Approach 1:

The reflective layer thickness is optimized to a specific range (50-200 nm) rather than made uniformly thick. This parameter optimization ensures sufficient reflectivity while maintaining thermal conductivity. Additionally, the adhesive layer material (Ti or Al) is selected for its excellent thermal conductivity to facilitate heat dissipation from the LED chip through the substrate.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution improves light takeoff efficiency and reliability by ensuring strong adhesion between the reflective layer and the substrate, maintaining high reflectivity and heat dissipation, while preventing separation at the interface.

Implementation Method 1

a reflective layer is provided on the back of the substrate, thereby improving the reflectivity of light to the element structure side, and increasing the light takeoff efficiency

Methodology Applied
Scientific EffectLight reflection: Reflection

Implementation Method 2

an adhesive layer provided between the crystal substrate and the reflective layer

Methodology Applied
Scientific EffectAdhesion: Adhesive

Data Source

PatentUS10868219B2Method for manufacturing semiconductor element
Publication Date: 2020.12.15 NICHIA CORP
  • US10868219B2 patent drawing
  • US10868219B2 patent drawing
  • US10868219B2 patent drawing

AI summary

A method for manufacturing a semiconductor element includes providing a semiconductor layer on a carbide substrate, the carbide substrate having a semiconductor layer contact surface connected to the semiconductor layer and a reflective layer contact surface opposite to the semiconductor layer contact surface. A reflective layer is provided on the reflective layer contact surface of the carbide substrate. The reflective layer contains silver and at least one of oxide particles and nitride particles.