Carbon-Rich Bonding Layer for Stronger 3D Wafer Bonding
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current wafer bonding techniques in 3D wafer technology face issues with insufficient bonding strength, defects, and metal diffusion at the bonding interface, affecting production yield and product performance.
Innovation Solution
A semiconductor structure with a bonding layer composed of a dielectric material containing carbon (C) with a C atomic concentration of at least 35% is used, enhancing bonding strength and blocking metal diffusion through oxidation of CH3 groups to OH groups.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If silicon oxide film and silicon nitride film are used as bonding film, then bonding process can be implemented, but bonding strength is insufficient and defects are generated
Solution Approach 1:
The patent changes the material composition parameters of the bonding film by incorporating carbon-containing dielectric materials with specific C atomic concentrations (≥35% in surface layer). This compositional parameter change enhances bonding strength while reducing defect generation, resolving the contradiction between achieving sufficient bonding strength and preventing defects.
Solution Approach 2:
The patent uses composite dielectric materials containing silicon, nitrogen, and carbon elements (such as silicon oxycarbide or silicon nitride with carbon doping) instead of conventional single-material bonding films. This composite material approach provides both high bonding strength and low defect generation, simultaneously addressing both requirements.
2Ease of operation
If metal connection structures are formed in bonding film for hybrid bonding, then electrical connection is achieved, but metal diffusion occurs at bonding interface affecting performance
Solution Approach 1:
The carbon-containing dielectric material acts as an intermediary barrier layer between metal connection structures and the bonding interface. The specific material composition and C atomic concentration create a diffusion barrier that prevents metal atoms from migrating across the bonding interface, while still allowing the metal connection structures to function electrically.
Solution Approach 2:
By adjusting the carbon content and composition parameters of the bonding film material, the patent creates optimal conditions that simultaneously enable metal connection formation and prevent metal diffusion. The specific C atomic concentration range (≥35%) is determined to provide the right balance between electrical functionality and diffusion barrier properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The carbon-containing bonding layer improves bonding strength and prevents metal diffusion, resulting in enhanced semiconductor structure performance.
Implementation Method 1
enhancing bonding strength and blocking metal diffusion through oxidation of CH3 groups to OH groups
Data Source
AI summary
The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first substrate, and a bonding layer located on a surface of the first substrate. The material of the first bonding layer is a dielectric material containing element carbon (C). C atomic concentration of a surface layer of the first bonding layer away from the first substrate is higher than or equal to 35%. The first bonding layer of the semiconductor structure may be used to enhance bonding strength during bonding.