Variable Carbon Concentration in Semiconductor Substrates
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Solution Overview
Problem
The challenge in semiconductor manufacturing lies in achieving efficient doping of semiconductor substrates with varying conductivity types and doping concentrations, particularly in increasing the doping efficiency of donors caused by proton implantation.
Innovation Solution
A method involving the implantation of protons into semiconductor substrates with tailored dose and temperature profiles based on carbon-related parameters, such as carbon concentration, to adjust and enhance doping concentration and distribution, utilizing proton-induced donors and interstitial carbon complexes to increase doping efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a higher proton dose is used to increase doping concentration, then the doping efficiency improves, but the complexity of process control increases
Solution Approach 1:
The patent changes the carbon concentration parameter in the semiconductor substrate to optimize doping efficiency. By adjusting the carbon content rather than increasing proton dose, the process achieves better doping control without proportionally increasing process complexity. The method establishes a relationship between carbon concentration and doping efficiency, allowing parameter optimization through material composition rather than process intensity.
2Reliability
If proton implantation is used to generate donors, then doping regions can be formed, but the doping efficiency is insufficient
Solution Approach 1:
The patent introduces carbon atoms as an intermediary that mediates between proton implantation and donor formation. The carbon atoms interact with implanted protons to enhance the formation of hydrogen-induced donors, acting as a catalyst or mediator that amplifies the doping effect. This intermediary mechanism increases doping efficiency by facilitating the interaction between protons and the semiconductor lattice.
Solution Approach 2:
The patent creates a composite structure at the atomic level by incorporating carbon into the silicon lattice before or during proton implantation. This carbon-silicon composite substrate exhibits enhanced doping characteristics compared to pure silicon, where the carbon atoms modify the lattice properties to improve proton-induced donor formation and overall doping effectiveness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for more accurate and flexible doping profiles, enabling the use of substrates with high carbon concentrations and reducing the need for higher proton doses, thereby improving doping efficiency and substrate performance.
Implementation Method 1
Many semiconductor devices comprise semiconductor substrates with regions of different conductivity types and different doping concentrations. The implementation of semiconductor substrates with different doping regions is often a challenging task. One way of generating donors within a semiconductor is an implant of protons to generate hydrogen-induced donors.
Implementation Method 2
tempering the semiconductor substrate according to a defined temperature profile
Implementation Method 3
tempering the semiconductor substrate according to a defined temperature profile
Data Source
AI summary
A semiconductor device includes at least one transistor structure. The at least one transistor structure includes an emitter or source terminal, and a collector or drain terminal. A carbon concentration within a semiconductor substrate region located between the emitter or source terminal and the collector or drain terminal varies between the emitter or source terminal and the collector or drain terminal.