Carbon Heat-Spreading Electrode Structure Against Electromigration
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Solution Overview
Problem
Semiconductor elements face issues with electromigration, leading to line disconnection due to metal ion movement at high currents, which limits the allowable current and can cause device malfunction.
Innovation Solution
A semiconductor device design incorporating a heat dissipation layer made of carbon atoms, such as graphene or nanotubes, with a wider width than the metal layer, to enhance electrical conductivity and distribute heat effectively, thereby increasing the allowable current limit and maintaining continuous current flow even after a short circuit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal materials such as copper and aluminum are used in electrode structures, then electrical conductivity is improved, but electromigration phenomenon occurs leading to line disconnection at high currents
Solution Approach 1:
The patent uses a composite structure combining a carbon material layer (graphene, diamond, carbon nanotubes) with a metal layer. The carbon material layer suppresses electromigration by providing a diffusion barrier for metal atoms while maintaining high electrical conductivity. This composite approach allows the structure to withstand higher currents without line disconnection, resolving the contradiction between conductivity and electromigration resistance.
2Reliability
If metal materials are used to increase allowable current, then electrical conductivity improves, but heat accumulation occurs causing line disconnection
Solution Approach 1:
The carbon material layer in the composite structure has high thermal conductivity, which helps dissipate heat generated at high currents. This prevents heat accumulation that would otherwise lead to line disconnection, while the metal layer maintains electrical conductivity. The synergistic effect resolves the contradiction between allowable current and heat management.
3Reliability
If carbon material layer is added to suppress electromigration, then reliability improves, but device complexity increases
Solution Approach 1:
The patent extracts the heat dissipation and electromigration suppression function into a separate carbon material layer, which can be independently optimized and manufactured. This modular approach allows the carbon layer to be added to existing metal interconnect structures without fundamentally redesigning the entire device, thus improving reliability while limiting the increase in complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves a higher allowable current limit and continuous current flow, preventing device malfunction by effectively distributing heat and improving electrical conductivity, even after a short circuit occurs.
Implementation Method 1
due to the high thermal conductivity of a carbon material, it is possible to delay line disconnection generated due to heat
Implementation Method 2
a carbon material layer inhibits diffusion of metal atoms to suppress the electromigration phenomenon
Data Source
AI summary
The present disclosure provides a semiconductor device including an electrode structure which has a high allowable current limit and a continuous current flow after a short circuit. The semiconductor device comprises a substrate, a first heat dissipation layer extending in a first direction on a substrate, and a metal layer extending in the first direction on the first heat dissipation layer, wherein a width of the first heat dissipation layer in a second direction intersecting the first direction is greater than a width of the metal layer in the second direction, and the first heat dissipation layer has a structure made of carbon atoms and includes at least one among graphene, nanotubes, and a diamond structure.