Photo-Patterned Carbon Electronics for High-Temperature Semiconductors
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Solution Overview
Problem
Existing semiconductor components made from silicon and other materials lose effectiveness in high heat environments, and suitable doping techniques for carbon-based semiconductors, such as carbon nanotubes and diamond-like carbon, have been elusive, leading to suboptimal performance.
Innovation Solution
A system and method using ultraviolet light, a substrate, a mask, and a doping agent precursor to selectively dope carbon-based semiconductor layers, allowing for the production of carbon-based electrical components with improved thermal and electrical properties, including the use of Deep Ultraviolet and Extreme Ultraviolet Light sources and stepper lasers, and specific doping agents like COF2 and Cesium.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If silicon-based semiconductor components are used, then manufacturing technology is mature and cost-effective, but thermal performance deteriorates in high heat environments
Solution Approach 1:
The patent changes the material parameter from silicon to carbon-based materials (carbon nanotubes, diamond-like carbon, graphene), fundamentally altering the thermal and electrical properties to achieve high-temperature operation while maintaining manufacturing feasibility through established deposition techniques
Solution Approach 2:
The patent employs composite carbon structures combining different carbon allotropes (nanotubes, diamond-like carbon, graphene) to achieve optimal thermal conductivity and electrical properties that neither material could provide alone
2Temperature
If carbon-based semiconductor materials are used, then thermal conductivity is improved, but doping techniques are difficult to implement
Solution Approach 1:
The patent applies preliminary doping during the carbon layer deposition process itself, incorporating dopants into the carbon structure as it forms, rather than attempting to dope pre-formed carbon layers, thereby simplifying the manufacturing process
Solution Approach 2:
The patent uses oxygen plasma as an intermediary to facilitate dopant incorporation into the carbon structure, enabling effective doping through a mediating chemical process that overcomes the inherent difficulty of direct carbon doping
3Temperature
If conventional cooling systems are added to silicon components, then thermal management is improved, but device complexity increases
Solution Approach 1:
The carbon-based semiconductor materials inherently provide their own thermal management through their superior thermal conductivity, eliminating the need for external cooling systems and reducing overall device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the creation of cost-effective carbon-based semiconductor components with enhanced thermal conductivity and electrical performance, capable of withstanding high temperature environments without the need for additional cooling systems.
Implementation Method 1
light from the ultraviolet light source irradiates a doping agent precursor and the first carbon layer
Data Source
AI summary
A system is provided for the manufacture of carbon based electrical components including, an ultraviolet light source; a substrate receiving unit whereby a substrate bearing a first layer of carbon based semiconductor is received and disposed beneath the ultraviolet light source; a mask disposed between the ultraviolet light source and the carbon based semiconductor layer; a doping agent precursor source; and environmental chemical controls, configured such that light from the ultraviolet light source irradiates a doping agent precursor and the first carbon layer.