High-Density Carbon Film Deposition With Reduced Substrate Backside Damage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional methods for forming carbon hardmasks with high etch selectivity cause substrate softening and backside damage, leading to reduced device yield due to high processing temperatures and power usage.
Innovation Solution
A method involving low temperature plasma enhanced chemical vapor deposition (PECVD) using dual RF power and controlled processing conditions to deposit high density amorphous carbon films, minimizing substrate backside damage by maintaining the substrate support at temperatures below 450°C and applying dual-frequency RF power.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional high temperature processing is used to form carbon hardmasks with high etch selectivity, then etch selectivity is improved, but substrate backside damage increases
Solution Approach 1:
The patent changes the processing temperature parameter from conventional high temperatures (>600°C) to low temperatures (200-450°C) while using dual-frequency RF plasma to maintain film quality and etch selectivity at the lower temperature, thereby resolving the contradiction between etch selectivity and substrate damage
Solution Approach 2:
The patent replaces thermal processing with plasma-enhanced chemical vapor deposition (PECVD) using dual-frequency RF power. This substitution allows carbon film deposition and activation at lower temperatures while maintaining the required film density and etch selectivity, thus preventing substrate backside damage
2Reliability
If high processing temperature is applied to achieve high etch selectivity, then carbon film etch resistance is improved, but device yield decreases
Solution Approach 1:
The patent changes the temperature parameter to low range (200-450°C) and compensates by optimizing dual-frequency RF power parameters and gas composition, achieving carbon films with sufficient etch resistance without the substrate damage that would reduce device yield
Solution Approach 2:
The patent uses a composite approach combining low-temperature PECVD with dual-frequency RF plasma and specific gas mixtures (hydrocarbon precursor with hydrogen and nitrogen) to create carbon films that have both the required etch resistance and compatibility with temperature-sensitive substrates, thereby maintaining high device yield
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves high etch selectivity and reduced substrate damage, resulting in improved device yield and comparable film properties to conventional high-temperature methods without increasing processing temperature.
Implementation Method 1
applying a dual radio frequency (RF) power comprising a high frequency RF power and a low frequency RF power to the substrate support to generate and maintain a deposition plasma to deposit a carbon film on the substrate
Implementation Method 2
flowing a processing gas comprising a hydrocarbon precursor gas into a processing volume of a process chamber
Implementation Method 3
performing an annealing process to anneal the carbon film deposited on the substrate
Data Source
AI summary
In an embodiment, a method for processing a substrate is provided. The method includes flowing a processing gas comprising a hydrocarbon precursor gas into a processing volume of a process chamber, heating and maintaining the substrate support at a processing temperature of less than about 450° C., applying a dual radio frequency (RF) power to generate a deposition plasma for depositing a carbon film on the substrate, and performing an annealing process to anneal the carbon film deposited on the substrate.