Carbon Gap Fill Plasma Sequencing for Seamless Recessed Features
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Solution Overview
Problem
Conventional semiconductor processing methods struggle to fill recessed features with carbon-containing material without leaving seams or voids, especially in high aspect ratio structures, and often require separate chambers for etching and deposition, leading to contamination and structural flaws in final devices.
Innovation Solution
The method involves providing a carbon-containing precursor and a second precursor to a semiconductor processing chamber, forming a plasma at high power to deposit carbon-containing material within recessed features, and applying bias power to ensure uniform deposition and prevent seams or voids, all performed in the same chamber to reduce contamination and improve structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition methods are used to fill recessed features, then the deposition process is simple, but seams or voids are formed in the deposited material
Solution Approach 1:
The deposition process is divided into multiple sequential steps with different plasma conditions. First, a low-power plasma deposition fills the recessed features conformally. Then, a high-power plasma deposition completes the fill. This segmentation allows each step to optimize for its specific function, achieving seamless fill without requiring complex equipment modifications.
Solution Approach 2:
The deposition is performed in periodic cycles alternating between low-power and high-power plasma modes. The low-power phase deposits material conformally on sidewalls, while the high-power phase provides enhanced deposition rate for filling. This periodic switching of plasma power levels enables controlled, defect-free filling of high aspect ratio structures.
2Reliability
If separate chambers are used for etching and deposition, then each process can be optimized independently, but contamination and structural flaws occur in final devices
Solution Approach 1:
The patent combines the etching and deposition processes into a single vacuum chamber. The chamber is configured with both etching electrodes and deposition gas delivery systems, allowing sequential performance of etching followed by gap fill deposition without breaking vacuum or transferring substrates. This merging eliminates contamination from chamber transitions and ensures structural integrity of the filled features.
3Productivity
If high deposition rate is used to fill recessed features quickly, then productivity increases, but seams or voids are formed
Solution Approach 1:
The plasma power level is dynamically adjusted during the deposition process. The system transitions from low-power plasma (slower deposition, conformal coverage) to high-power plasma (faster deposition, complete filling). This dynamic control of deposition rate allows the process to adapt to the filling stage, achieving both high productivity and seamless fill quality.
Solution Approach 2:
The deposition process utilizes changes in plasma power parameters to control deposition rate and material quality. By switching between low-power and high-power plasma conditions, the process optimizes the balance between deposition speed and fill quality. The parameter change enables the system to achieve high productivity without sacrificing the seamless fill requirement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for uniform deposition of carbon-containing material within recessed features, reducing or eliminating seams and voids, and enhances the structural integrity of semiconductor devices by filling high aspect ratio structures without sealing off the features prematurely, thereby preventing defects in subsequent integration processes.
Implementation Method 1
forming a plasma of the carbon-containing precursor and the second precursor in the processing region. depositing a carbon-containing material on the substrate. The carbon-containing material may extend within the one or more recessed features along the substrate
Implementation Method 2
applying a bias power while depositing the carbon-containing material on the substrate for a second period of time
Data Source
AI summary
Exemplary semiconductor processing methods may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may define one or more recessed features. The methods may include providing a second precursor to the processing region. The methods may include forming a plasma of the carbon-containing precursor and the second precursor in the processing region. Forming the plasma of the carbon-containing precursor and the second precursor may be performed at a plasma power of greater than or about 500 W. The methods may include depositing a carbon-containing material on the substrate. The carbon-containing material may extend within the one or more recessed features. The methods may include, subsequent depositing the carbon-containing material for a first period of time, applying a bias power while depositing the carbon-containing material for a second period of time.