Carbon Gapfill via Hydrogen Plasma Etching
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Solution Overview
Problem
Conventional semiconductor processing methods face challenges in depositing carbon-containing materials into high aspect ratio features, often resulting in voids or seams that can lead to structural flaws and defects in integrated circuits as device sizes shrink.
Innovation Solution
The method involves providing a carbon-containing precursor to a semiconductor processing chamber, forming a plasma, and depositing the material on a substrate with controlled plasma power and pressure. Subsequently, a hydrogen-containing plasma is used to treat the carbon-containing material, removing excess portions and minimizing voids or seams by iteratively depositing and treating the material in multiple cycles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition methods are used to deposit carbon-containing materials into high aspect ratio features, then the features can be filled, but voids or seams form in the deposited material
Solution Approach 1:
The patent applies periodic action by alternating between deposition steps and hydrogen plasma treatment steps in a cyclic manner. The deposition step fills the feature with carbon-containing material, while the hydrogen plasma step removes excess material and prevents void formation. This periodic alternation continues until the feature is completely filled without voids or seams, resolving the contradiction between achieving complete fill and maintaining structural integrity.
Solution Approach 2:
The patent changes process parameters by introducing hydrogen plasma treatment at specific stages during deposition. The hydrogen plasma modifies the carbon-containing material by removing excess portions and altering surface properties, which prevents void formation and improves material density. This parameter change transforms the deposition process from a simple fill operation to a controlled process that ensures both complete filling and structural integrity.
2Productivity
If device sizes are reduced to continue scaling, then circuit density increases, but void or seam formation becomes more difficult to control
Solution Approach 1:
The patent applies preliminary action by performing hydrogen plasma treatment during the deposition process itself, rather than as a separate post-processing step. This preliminary treatment removes excess material and prevents void formation while the feature is still being filled, allowing better control over void formation in scaled-down devices with higher circuit density requirements.
Solution Approach 2:
The patent ensures continuity of useful action by integrating the hydrogen plasma treatment into the deposition sequence, creating a continuous process that simultaneously fills features and prevents defect formation. This continuous approach maintains manufacturing precision even as device sizes reduce and circuit density increases, avoiding interruptions that would compromise void control.
3Productivity
If plasma power is increased to improve deposition rate, then productivity increases, but void or seam formation worsens
Solution Approach 1:
The patent introduces hydrogen plasma as an intermediary substance that mediates between the deposition process and the final material quality. The hydrogen plasma acts as a controlling agent that removes excess carbon-containing material and prevents void formation, allowing the use of higher plasma power for improved deposition rate without compromising manufacturing precision. The intermediary hydrogen plasma bridges the gap between high productivity and low defect formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the size and occurrence of voids or seams, ensuring complete filling of features and preventing defects in the final devices, thereby improving the quality of semiconductor structures.
Implementation Method 1
forming a plasma of the carbon-containing precursor within the processing region
Implementation Method 2
depositing a carbon-containing material on the substrate. The carbon-containing material may extend within the one or more features along the substrate
Implementation Method 3
treating the carbon-containing material with plasma effluents of the hydrogen-containing precursor. The plasma effluents of the hydrogen-containing precursor may cause a portion of the carbon-containing material to be removed from the substrate
Data Source
AI summary
Exemplary methods of semiconductor processing may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include forming a plasma of the carbon-containing precursor within the processing region. The methods may include depositing a carbon-containing material on the substrate. The carbon-containing material may extend within the one or more features along the substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include treating the carbon-containing material with plasma effluents of the hydrogen-containing precursor. The plasma effluents of the hydrogen-containing precursor may cause a portion of the carbon-containing material to be removed from the substrate.