Carbon Hard Mask Layer With Low k and High Density
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing carbon-containing layers used as hard masks in electronic device manufacturing exhibit either high extinction coefficients (high k-values) or low density, failing to meet the desired balance for high etch selectivity and transparency.
Innovation Solution
A method involving the use of a carbon precursor with sp3 hybridization bonds, polymerized under controlled conditions to form a carbon-containing layer with specific molecular weights and compositions, achieving both low extinction coefficients and high density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If attempts are made to reduce the k-value of carbon-containing layers, then transparency is improved, but density decreases
Solution Approach 1:
The patent applies parameter changes by modifying the hybridization state of carbon bonds from sp2 to sp3, changing the molecular structure and bonding characteristics. This fundamental parameter change allows simultaneous achievement of low k-value (high transparency) and high density, resolving the traditional trade-off between these two properties.
Solution Approach 2:
The patent creates a composite carbon-containing layer with specific molecular composition featuring sp3 hybridized carbon bonds. By controlling the molecular structure and composition to include specific ratios of sp3 carbon bonds and hydrogen content, the material achieves both high transparency and high density properties that cannot be obtained with conventional carbon materials.
2Reliability
If attempts are made to increase the density of carbon-containing layers, then etch selectivity is improved, but k-value increases
Solution Approach 1:
The patent changes the fundamental bonding parameter of carbon from sp2 to sp3 hybridization. This parameter change enables the material to achieve high density (improving etch selectivity) while simultaneously maintaining low k-value (preserving transparency), thus resolving the contradiction between etch selectivity and transparency.
Solution Approach 2:
The patent achieves local quality optimization by creating a carbon-containing layer with specific molecular structure characteristics throughout the material. The uniform distribution of sp3 hybridized carbon bonds and controlled hydrogen content creates consistent local properties that deliver both high etch selectivity and high transparency simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method produces carbon-containing layers with low k-values and high density, suitable for use as hard masks, enhancing the precision and efficiency of feature formation in electronic device manufacturing.
Implementation Method 1
heating a carbon precursor to produce a vaporized gas comprising carbon-containing molecules
Implementation Method 2
polymerizing the carbon-containing molecules to form the carbon-containing layer on the surface of a substrate
Implementation Method 3
providing the vaporized gas to the reaction chamber, and polymerizing the carbon-containing molecules to form the carbon-containing layer
Data Source
AI summary
A method of forming a carbon-containing layer on a surface of a substrate is disclosed. The method can include providing a substrate within a reaction chamber of a reactor, heating a carbon precursor to produce a vaporized gas comprising carbon-containing molecules, providing the vaporized gas to the reaction chamber, and polymerizing the carbon-containing molecules to form the carbon-containing layer on the surface of a substrate. The carbon compound can include 10 or more carbon atoms. Exemplary methods provide carbon-containing layer with desired density and transparency.


