Carbon Interconnect Structures for Low-RC IC Scaling
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Solution Overview
Problem
The scaling down of semiconductor devices and interconnect structures in the semiconductor industry leads to increased resistivity, resistance-capacitance (RC) delay, and decreased breakdown voltage, posing challenges in achieving low-power, high-performance, and low-cost integrated circuits.
Innovation Solution
The use of conductive carbon-based interconnect lines, including conductive graphene layers, within carbon-based interlayer dielectric layers, which reduce resistivity and RC delay, eliminate the need for barrier layers, and enhance breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional metal interconnect structures are scaled down, then device density increases, but resistivity and RC delay increase
Solution Approach 1:
The patent changes the material parameter from conventional metals to conductive carbon materials (graphene, carbon nanotubes), which fundamentally alters the electrical conductivity characteristics. This material substitution enables continued scaling while maintaining low resistivity and RC delay, directly resolving the technical contradiction between device density improvement and reliability degradation.
Solution Approach 2:
The patent employs composite interconnect structures combining conductive carbon layers with dielectric materials. The conductive carbon layers provide superior electrical conductivity while the composite structure enables precise control over electrical and mechanical properties, allowing scaling without the resistivity and RC delay penalties observed in conventional metal interconnects.
2Productivity
If conventional metal interconnect structures are scaled down, then device density increases, but breakdown voltage decreases
Solution Approach 1:
The patent changes the material composition to conductive carbon-based materials which inherently possess higher breakdown voltage characteristics. This parameter change in material properties allows the interconnect structure to withstand higher voltages even at scaled dimensions, resolving the contradiction between increased device density and decreased breakdown voltage.
3Reliability
If conventional metal interconnect structures are used, then electrical conductivity is achieved, but barrier layers are required increasing fabrication complexity
Solution Approach 1:
The patent extracts and eliminates the barrier layer requirement by using conductive carbon materials that are inherently compatible with dielectric materials. This removal of the barrier layer simplifies the interconnect structure and reduces fabrication complexity while maintaining excellent electrical conductivity, directly addressing the technical contradiction.
Solution Approach 2:
The patent achieves homogeneity in material compatibility between the interconnect and surrounding dielectric materials. Conductive carbon materials exhibit uniform chemical and electrical properties that eliminate the need for additional barrier layers, simplifying the overall structure and fabrication process while maintaining reliable electrical conductivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for aggressive scaling of interconnect structures without increasing resistivity or RC delay, reducing fabrication costs and complexity, while maintaining high reliability and performance.
Implementation Method 1
conductive carbon-based interconnect lines, including conductive graphene layers
Implementation Method 2
carbon-based interlayer dielectric layers
Data Source
AI summary
An integrated circuit (IC) with a semiconductor device and an interconnect structure with carbon layers and methods of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a source/drain region on the fin structure, forming a contact structure on the S/D region, forming an oxide layer on the contact structure, forming a conductive carbon line within a first insulating carbon layer on the oxide layer, forming a second insulating carbon layer on the first insulating carbon layer, and forming a via within the second insulating carbon layer.