Selective sp2 Carbon Masking for Aligned Interconnect Formation
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Solution Overview
Problem
The challenge in semiconductor device manufacturing is the misalignment or overlay issues during the formation of nano-scale wirings in interconnect structures, which existing methods fail to address effectively, particularly in high integration contexts.
Innovation Solution
A method involving the formation of a carbon layer with an sp2 bonding structure on a substrate, utilizing surface treatment layers to selectively deposit the carbon layer on specific material layers, which acts as a mask for forming interconnect structures, including the use of intrinsic graphene, nanocrystalline graphene, or graphene quantum dots, and varying surface energies to control the deposition of subsequent layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If photolithography process is used for nano-patterning, then wiring can be formed at nanoscale, but misalignment or overlay issues occur
Solution Approach 1:
A carbon layer is formed in advance on the metal layer before subsequent processing steps. This preliminary carbon layer serves as a protective mask that prevents material deposition and etching on the metal wiring, ensuring precise alignment without requiring additional photolithography steps for each layer.
Solution Approach 2:
The carbon layer acts as an intermediary protective layer between the metal wiring layer and subsequent processing materials. It mediates the interaction by providing a stable, patternable surface that protects the underlying metal from contamination and damage while allowing precise pattern transfer.
2Manufacturing precision
If carbon layer is formed to act as mask, then alignment precision is improved, but surface treatment complexity increases
Solution Approach 1:
The surface energy of the metal layer is modified by forming a carbon layer with specific properties (sp2 bonding structure, hydrophobic characteristics). This parameter change enables selective deposition and pattern formation while simplifying subsequent processing steps, as the carbon layer provides inherent protection and pattern definition capabilities.
3Manufacturing precision
If surface treatment layer is formed to control deposition, then selective formation accuracy is improved, but process steps increase
Solution Approach 1:
The carbon layer formation combines multiple functions into a single step: it serves as both the pattern definition layer and the protective mask, eliminating the need for separate photoresist application, baking, and removal steps. This merging of functions improves both precision and productivity.
Solution Approach 2:
The carbon layer performs multiple functions simultaneously: it acts as a deposition mask, a protective barrier, and a pattern transfer layer. This multi-functionality reduces the total number of process steps while maintaining high selective formation accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise and selective formation of interconnect structures by reducing surface energy differences between material layers, allowing for accurate masking and deposition processes, thereby improving the alignment and integration of nano-scale wirings in semiconductor devices.
Implementation Method 1
The selectively forming the carbon layer may include selectively forming the carbon layer on a hydrophobic surface of the first material layer or a hydrophobic surface of the second material layer
Implementation Method 2
the surface treatment layer may include at least one of forming a hydrophobic surface treatment layer on one of the first material layer and the second material layer, and forming a hydrophilic surface treatment layer on an other of the first material layer and the second material layer
Data Source
AI summary
Provided are a method of forming a carbon layer and a method of forming an interconnect structure. The method of forming a carbon layer includes providing a substrate including first and second material layers, forming a surface treatment layer on at least one of the first and second material layers, and selectively forming a carbon layer on one of the first material layer and the second material layer. The carbon layer has an sp2 bonding structure.