2D Carbon Nanostructure Hardmask for High Aspect Ratio Etching
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Solution Overview
Problem
The semiconductor industry faces challenges in forming fine patterns with desirable profiles due to increased aspect ratios and etching resistance limitations in hardmask materials, particularly when using traditional lithographic techniques and existing hardmask materials, which can lead to deteriorated electrical characteristics and limited etching resistance.
Innovation Solution
A method of forming a hardmask composition using a 2-dimensional carbon nanostructure with specific oxygen content and solvent combinations, characterized by Raman spectroscopy and X-ray diffraction analysis, to enhance etching resistance and pattern formation capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the height of photoresist layer and hardmask pattern is increased to handle high aspect ratio material layers, then etching capability is improved, but the hardmask pattern may be damaged during etching process and electrical characteristics deteriorate
Solution Approach 1:
The patent uses a composite hardmask structure consisting of a lower hardmask layer (higher etching resistance) and an upper hardmask layer (lower etching resistance). This composite structure allows the lower layer to protect the pattern during deep etching while the upper layer prevents pattern damage, thereby resolving the contradiction between etching capability and hardmask integrity.
2Device complexity
If conventional hardmask materials are used, then process simplicity is maintained, but etching resistance is insufficient for narrow line-width patterns
Solution Approach 1:
The patent employs a composite hardmask structure with two distinct layers having different etching resistance characteristics. The lower layer provides high etching resistance for deep etching processes, while the upper layer has lower etching resistance to prevent pattern damage. This composite approach enhances etching resistance without significantly complicating the overall process.
Solution Approach 2:
The patent changes the etching resistance parameter by creating a gradient structure where the lower hardmask layer has higher etching resistance than the upper hardmask layer. This parameter variation allows optimization of both deep etching capability and pattern protection, addressing the insufficiency of conventional uniform hardmask materials.
3Reliability
If multiple layers of conductive or insulating material are stacked to form hardmask, then etching resistance is improved, but high deposition temperature modifies physical properties of material layer
Solution Approach 1:
The patent changes the material composition parameter by using carbon-based hardmask layers instead of traditional conductive or insulating materials. This material substitution allows achieving high etching resistance without requiring high deposition temperatures, thereby preserving the physical properties of the underlying material layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed method improves etching resistance and pattern formation, enabling the creation of high-aspect-ratio patterns with excellent mechanical strength and ease of removal, thus enhancing semiconductor process efficiency.
Implementation Method 1
it is desirable for the hardmask layer to have chemical resistance, thermal resistance, and etching resistance in order to tolerate various types of etching processes
Implementation Method 2
An intensity ratio of a D mode peak to a G mode peak obtained by Raman spectroscopy of the 2-dimensional carbon nanostructure
Implementation Method 3
A diffraction angle 2θ of a (002) crystal face peak obtained by X-ray diffraction analysis of the 2-dimensional carbon nanostructure
Data Source
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AI summary
A hardmask composition may include a solvent and a 2-dimensional carbon nanostructure containing about 0.01 atom% to about 40 atom% of oxygen or a 2-dimensional carbon nanostructure precursor thereof. A content of oxygen in the 2-dimensional carbon nanostructure precursor may be lower than about 0.01 atom% or greater than about 40 atom %. The hardmask composition may be used to form a fine pattern.