Carbon Nanotube Interconnects for Semiconductor Reliability
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Solution Overview
Problem
As semiconductor devices are scaled down, metal wiring resistance increases, leading to signal transmission speed lag and issues like shorts due to metal ion diffusion in interconnect structures.
Innovation Solution
A semiconductor structure with interconnects formed using a conductive material and a nanotube/wire layer surrounded by the conductive material, enhancing thermal conductivity and anti-electromigration capabilities, and preventing ion diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If metal wiring size is scaled down to increase element density, then device element density is improved, but metal wiring resistance increases
Solution Approach 1:
The patent employs a composite interconnect structure consisting of carbon nanotubes embedded in a metal matrix (such as copper). The carbon nanotubes provide low-resistance conduction paths and prevent metal ion diffusion, while the metal matrix provides structural support and additional conductivity. This composite approach resolves the contradiction by maintaining low resistance even as dimensions are scaled down, thereby preserving signal transmission speed while enabling higher element density.
2Reliability
If metal Cu or other materials with smaller resistance rate are used to replace local interconnect structures, then conductivity is improved, but metal ion diffusion causes shorts in device structure
Solution Approach 1:
The patent introduces carbon nanotubes as an intermediary material within the metal interconnect structure. These nanotubes act as physical barriers that prevent metal ions from diffusing into the semiconductor substrate, while simultaneously providing excellent electrical conductivity. The carbon nanotubes mediate between the need for high conductivity (provided by metal Cu) and the need to prevent ion diffusion (shorts), thus resolving the contradiction.
Solution Approach 2:
The composite structure of carbon nanotubes embedded in metal matrix creates a dual-function interconnect material. The metal phase provides high conductivity, while the carbon nanotube phase provides diffusion barrier functionality. This composite material simultaneously achieves both improved conductivity and prevention of metal ion diffusion, resolving the technical contradiction.
3Reliability
If carbon nanotube/wire layer is added to conductive layer, then anti-electromigration capability and thermal conductivity are improved, but manufacturing process complexity increases
Solution Approach 1:
The patent employs preliminary action by forming the carbon nanotube layer before depositing the metal conductive material. The carbon nanotubes are pre-aligned and positioned in the desired orientation, creating a template structure that guides subsequent metal deposition. This preliminary preparation simplifies the overall manufacturing process by establishing the diffusion barrier and conductive framework beforehand, reducing the complexity of achieving both low resistance and ion diffusion prevention in a single step.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves signal transmission speed and reduces the risk of short circuits by utilizing the unique properties of nanotubes/wires, ensuring high-quality interconnects that match device speed and prevent metal ion diffusion.
Implementation Method 1
since the nanotube/wire has unique physical structure and physical and chemical properties, it enables the conductive layer to have better thermal conductivity, conductivity
Implementation Method 2
it enables the conductive layer to have better thermal conductivity, conductivity
Implementation Method 3
since the carbon nanotube/wire is a structure formed by single-layer carbon atoms or metal atoms, thus it is favorable for preventing the metal or other ions within the conductive material from diffusing into other places in the semiconductor structure
Data Source
AI summary
The present invention relates to a semiconductor device structure and a method for manufacturing the same; the structure comprises: a semiconductor substrate on which a device structure is formed thereon; an interlayer dielectric layer formed on the device structure, wherein a trench is formed in the interlayer dielectric layer, the trench comprises an incorporated via trench and a conductive wiring trench, and the conductive wiring trench is positioned on the via trench; and a conductive layer filled in the trench, wherein the conductive layer is electrically connected with the device structure; wherein the conductive layer comprises a conductive material and a nanotube/wire layer surrounded by the conductive material. Wherein, the conductive layer comprises a conductive material and a nanotube/wire layer surrounded by the conductive material. The conductive layer of the structure has better thermal conductivity, conductivity and high anti-electromigration capability, thus is able to effectively prevent metal ions from diffusing outwards.