Carbon Nanotube Thin Film Transistor Interface Barrier Reduction
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Solution Overview
Problem
Conventional thin film transistors face issues due to interface barriers between semiconductor and metal electrodes, affecting their properties and light transmittance, primarily because of the thickness and material differences between the semiconductor and electrode layers.
Innovation Solution
A thin film transistor design utilizing disordered single-walled carbon nanotube layers for both the semiconductor and electrode structures, with varying density and resistance values, to enhance conductivity and reduce interface resistance, while maintaining a thin profile for improved light transmittance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional metal materials are used for source and drain electrodes, then good electrical conductivity is achieved, but interface barriers with semiconductor layer adversely affect transistor properties
Solution Approach 1:
The patent applies homogeneity by using carbon nanotubes for both the semiconductor layer and the source/drain electrodes. This material uniformity eliminates the interface barriers that arise from material mismatches between conventional metal electrodes and semiconductor layers, thereby improving transistor properties without adverse interface effects.
Solution Approach 2:
The patent employs composite materials by utilizing carbon nanotubes with specific structural and electrical properties for electrode fabrication. The carbon nanotube-based electrodes provide both the electrical conductivity needed for functionality and compatibility with the semiconductor layer, resolving the interface barrier issue while maintaining performance.
2Reliability
If thicker semiconductor and electrode layers are used, then better electrical conductivity and device performance are achieved, but light transmittance of the thin film transistor deteriorates
Solution Approach 1:
The patent applies parameter changes by precisely controlling the thickness of carbon nanotube layers in the semiconductor and electrode structures. By optimizing layer thickness at the nanoscale, the invention achieves sufficient electrical conductivity while maintaining thin profiles that allow high light transmittance, thus resolving the contradiction between electrical performance and optical properties.
3Illumination intensity
If carbon nanotube layers with optimized thickness are used, then light transmittance is improved, but electrical conductivity may be reduced
Solution Approach 1:
The patent employs composite materials by using carbon nanotubes with specific structural and electrical properties for electrode fabrication. The carbon nanotube-based electrodes provide both the electrical conductivity needed for functionality and compatibility with the semiconductor layer, resolving the interface barrier issue while maintaining performance.
Solution Approach 2:
The patent applies parameter changes by precisely controlling the thickness of carbon nanotube layers in the semiconductor and electrode structures. By optimizing layer thickness at the nanoscale, the invention achieves sufficient electrical conductivity while maintaining thin profiles that allow high light transmittance, thus resolving the contradiction between electrical performance and optical properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The carbon nanotube-based thin film transistor achieves high on/off current ratios and electron mobility, along with enhanced electrical conductivity and light transmittance by minimizing interface barriers and optimizing layer thickness.
Implementation Method 1
The semiconductor layer 140, the source electrode 150, and the drain electrode 160 are made of single-walled carbon nanotube layers
Implementation Method 2
The thin film transistor performs a switching operation by modulating an amount of carriers accumulated in an interface between the insulation layer and the semiconductor layer from an accumulation state to a depletion state, with applied voltage to the gate electrode
Data Source
AI summary
A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, an insulating layer and a gate electrode. The drain electrode is spaced from the source electrode. The semiconductor layer is electrically connected to the source electrode and the drain electrode. The gate electrode is insulated with the source electrode, the drain electrode and the semiconductor layer by the insulating layer. The gate electrode, the source electrode, and the drain electrode comprise a plurality of first carbon nanotubes. The semiconductor layer comprises a plurality of second carbon nanotubes. A distribution density of the plurality of first carbon nanotubes is about 20 times as much as that of the plurality of second carbon nanotubes. A number of the plurality of second carbon nanotubes in 1 square micrometers is smaller than or equal to 1.