Carbon-Doped Oxyfluoride Coating for Fluorine Plasma Etch Chambers
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Solution Overview
Problem
Halogen-containing plasmas used in semiconductor manufacturing erode and contaminate plasma etching chamber components, leading to reduced device yields and shortened chamber lifetimes, and existing protective coatings like Yttria-based layers react with fluorine plasma, causing surface contamination and process instability.
Innovation Solution
A vacuum-compatible plasma etch chamber coating comprising a thin film of fluorinated metal oxide with carbon, specifically Yttrium-based, having a gradient or multilayer structure with controlled fluorine concentration, applied via Physical Vapor Deposition or Chemical Vapor Deposition to enhance plasma etch-resistance and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If Y2O3 is used as an etch protection layer in fluorine-containing plasma, then plasma erosion and corrosion resistance is improved, but the Y2O3 layer reacts with fluorine plasma to form YOF surface layer which peels off and generates particles causing surface contamination
Solution Approach 1:
The patent modifies the chemical composition parameters of the protective coating by incorporating carbon-doped yttrium oxyfluoride (CYOF) with specific atomic ratios (Y:O:F:C = 1:(1-x-y):x:y where 0.05≤x≤0.20 and 0.05≤y≤0.15). This parameter adjustment prevents the formation of problematic YOF layers while maintaining plasma resistance, thereby resolving the contradiction between erosion resistance and particle generation.
Solution Approach 2:
The patent creates a composite coating material by combining yttrium, oxygen, fluorine, and carbon elements in specific proportions. The carbon-doped CYOF composite structure prevents the formation of pure YOF layers that cause peeling, while maintaining the protective properties against plasma erosion. The composite nature of the coating eliminates particle generation issues associated with pure Y2O3 or YOF layers.
2Reliability
If YOF coating is applied to prevent further erosion by fluorine plasma, then chemical inertness with respect to F is improved, but fluorocarbon polymer layers deposit on the YOF surface causing uncontrolled shifts in etching processes
Solution Approach 1:
The patent adjusts the fluorine content parameter (controlled by variable x in the formula) to optimize the balance between chemical inertness and fluorocarbon deposition. By limiting fluorine content to specific ranges (0.05≤x≤0.20), the coating maintains sufficient chemical resistance while reducing excessive fluorocarbon polymer deposition, thereby maintaining etching process control.
Solution Approach 2:
The patent creates a coating with non-uniform elemental distribution where carbon doping is concentrated at specific depths and fluorine content varies through the coating thickness. This local quality variation ensures that the surface maintains chemical inertness while the bulk composition prevents excessive fluorocarbon deposition, resolving the contradiction between reliability and manufacturing precision.
3Reliability
If seasoning and conditioning are used to improve process stability and reproducibility, then process reproducibility is improved, but production time and cost are increased
Solution Approach 1:
The patent incorporates carbon doping during the initial coating deposition process itself, rather than requiring separate post-deposition seasoning or conditioning steps. The carbon-doped CYOF coating is formed with optimized composition (0.05≤x≤0.20, 0.05≤y≤0.15) that inherently provides stable and reproducible etching performance from the start, eliminating time-consuming conditioning procedures and improving productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The coating provides superior plasma etch-resistance and process stability, reducing contamination and extending chamber lifetime, while maintaining high reproducibility and reducing production costs through improved surface durability and reduced particulate formation.
Implementation Method 1
Yttria (Y2O3) has demonstrated longer chamber lifetime under plasma for both metal etch and dielectric silicon-based etch applications because of its higher plasma erosion and corrosion resistance
Implementation Method 2
The inventive film hereby is to be applied on chamber parts/components for use in semiconductor production equipment by Physical Vapor Deposition (PVD) and/or Chemical Vapor Deposition (CVD)
Implementation Method 3
The inventive film hereby is to be applied on chamber parts/components for use in semiconductor production equipment by Physical Vapor Deposition (PVD) and/or Chemical Vapor Deposition (CVD)
Data Source
AI summary
An article including: a substrate; and a protective film overlaying at least part of the substrate, the film including a fluorinated metal oxide, containing one or more elements of the Group III and/or Group IV elements of the periodical system of elements, characterized in that the protective film includes the fluorinated metal oxide with a carbon doping with a carbon concentration not lower than 0.1 at % and not higher than 10 at %, preferably not lower than 0.5 at % and more preferably not higher than 2.5 at %, wherein the article is a plasma etch chamber component and/or part and preferably an article of the group formed by electrostatic chuck, a ring, a process kit ring, a single ring, a chamber wall, a shower head, a nozzle, a lid, a liner, a window, a baffle or a fastener.