Semiconductor Chamber Cleaning via Carbon Precursor Volatilization

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Solution Overview

Problem

Conventional semiconductor processing technologies face challenges in removing aluminum fluoride byproducts, which cause process drift and yield loss due to re-deposition on chamber components, despite temperature reduction and seasoning methods.

Innovation Solution

The method involves generating a plasma of a fluorine-containing precursor for chamber cleaning, followed by contacting surfaces with a carbon-containing precursor to volatilize aluminum fluoride, maintaining the faceplate and substrate support at elevated temperatures to facilitate thermal removal and reduce re-deposition, and subsequently reducing chamber pressure to purge volatile byproducts.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If temperature reduction and seasoning methods are used to prevent aluminum fluoride re-deposition, then process drift is reduced, but cleaning effectiveness deteriorates

Engineering Contradiction:

Improveprocess drift controlVSAvoidcleaning effectiveness

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The cleaning process is divided into distinct stages: initial aggressive cleaning with fluorine-containing precursor to remove deposition residues, followed by a second stage using carbon-containing precursor to address aluminum fluoride re-deposition. This segmentation allows each stage to optimize for its specific function without compromise

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

A carbon-containing precursor is introduced as an intermediary substance in the second cleaning stage. This carbon-based material acts as a mediator that prevents aluminum fluoride re-deposition on chamber surfaces, enabling effective removal of cleaning byproducts without causing process drift

Inventive Principle:

Principle #24Intermediary (Mediator)

2Productivity

If aggressive cleaning is performed to remove deposition residues, then cleaning effectiveness is improved, but aluminum fluoride re-deposition increases causing process drift

Engineering Contradiction:

Improvecleaning effectivenessVSAvoidprocess drift control

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The aluminum fluoride re-deposition problem caused by aggressive cleaning is converted into a benefit by introducing a carbon-containing precursor. This precursor reacts with or adsorbs the aluminum fluoride, transforming the harmful re-deposition effect into a controllable intermediate state that can be easily removed, thereby maintaining both cleaning effectiveness and process stability

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The cleaning process utilizes parameter changes by switching between different precursor types (fluorine-containing to carbon-containing) and adjusting process conditions between stages. This parameter transformation allows the system to address different aspects of contamination sequentially, achieving both thorough cleaning and process drift control

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively reduces process drift and increases chamber uptime by removing aluminum fluoride, allowing for more aggressive cleaning and improved throughput with enhanced removal of deposition residues.

Implementation Method 1

forming a plasma of a fluorine-containing precursor

Methodology Applied

Scientific EffectPlasma: Plasma

Implementation Method 2

generating aluminum fluoride during the chamber clean

Methodology Applied

Scientific EffectChemical reaction: Chemical Bonding

Implementation Method 3

volatilizing aluminum fluoride from the surfaces of the processing region

Methodology Applied

Scientific EffectVolatilization: Evaporation

Implementation Method 4

maintaining the faceplate and substrate support at elevated temperatures to facilitate thermal removal

Methodology Applied

Scientific EffectThermal energy: Heating

Implementation Method 5

maintaining the faceplate and substrate support at elevated temperatures

Methodology Applied

Scientific EffectThermal heating: Heating

Implementation Method 6

pumping the processing region from a first pressure to a second pressure below or about 1 Torr

Methodology Applied

Scientific EffectVacuum pumping: Pump

Data Source

PatentUS11430641B1Processing systems and methods to control process drift

Publication Date: 2022.08.30 APPLIED MATERIALS INC

AI summary

Exemplary methods of semiconductor processing may include forming a plasma of a fluorine-containing precursor. The methods may include performing a chamber clean in a processing region of a semiconductor processing chamber. The processing region may be at least partially defined between a faceplate and a substrate support. The methods may include generating aluminum fluoride during the chamber clean. The methods may include contacting surfaces within the processing region with a carbon-containing precursor. The methods may include volatilizing aluminum fluoride from the surfaces of the processing region.