Carbon-Based Redistribution Layers for Thin Semiconductor Packages
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Solution Overview
Problem
Designing semiconductor device packages with small form factors that maintain effective electrical conductivity while minimizing height is challenging due to the thickness requirements of traditional metal-based redistribution layers.
Innovation Solution
The use of carbon-based conductive materials with low resistivity in redistribution layers, allowing for thin, high-temperature formation without damaging other semiconductor components, enables efficient signal transmission and reduced height profiles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional metal materials are used for redistribution layers, then effective electrical conductivity is achieved, but the height of the package increases due to the required thickness of several micrometers
Solution Approach 1:
The patent changes the material parameter from traditional metals (aluminum or copper requiring several micrometers thickness) to carbon-based materials that achieve effective electrical conductivity at much thinner dimensions, thereby reducing the redistribution layer thickness and overall package height while maintaining conductivity requirements
Solution Approach 2:
The patent employs carbon-based materials that can be formed as thin, disposable-like layers that are deposited and then removed or integrated, allowing for reduced thickness without compromising the electrical conductivity function during the critical redistribution phase
2Length of stationary object
If the redistribution layer thickness is reduced to decrease package height, then form factor is improved, but electrical conductivity becomes insufficient
Solution Approach 1:
The patent changes the material composition parameter to carbon-based materials that inherently provide superior electrical conductivity per unit thickness compared to traditional metals, allowing thin layers to maintain adequate conductivity while reducing overall height
Solution Approach 2:
The patent uses carbon-based materials that may be combined with other materials or structured as composite configurations to enhance electrical conductivity in the thickness direction, enabling thin redistribution layers to achieve required conductivity levels without increasing height
3Reliability
If high temperature processes are used to form conductive materials, then conductivity is improved, but other semiconductor components may be damaged
Solution Approach 1:
The patent employs carbon-based materials that can withstand high temperature formation processes and are deposited in a manner that allows the process to be completed quickly, minimizing thermal exposure time to sensitive semiconductor components while still achieving the required conductivity through the high-temperature formation step
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in semiconductor device packages with significantly reduced height form factors, enabling improved scaling in three-dimensional stacks and effective insulation with thinner passivation materials.
Implementation Method 1
carbon-based conductive materials with low resistivity in redistribution layers, allowing for thin, high-temperature formation without damaging other semiconductor components, enables efficient signal transmission
Data Source
AI summary
Semiconductor device packages include a redistribution layer (RDL) with carbon-based conductive elements. The carbon-based material of the RDL may have low electrical resistivity and may be thin (e.g., less than about 0.2 μm). Adjacent passivation material may also be thin (e.g., less than about 0.2 μm). Methods for forming the semiconductor device packages include forming the carbon-based material (e.g., at high temperatures (e.g., at least about 550° C.)) on an initial support wafer with a sacrificial substrate. Later or separately, components of a device region of the package may be formed and then joined to the initial support wafer before the sacrificial substrate is removed to leave the carbon-based material joined to the device region.