Carbon-Rich Copper Layer Structure for Strain Reduction
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Solution Overview
Problem
The semiconductor industry faces challenges in manufacturing copper layers for integrated circuits due to self-annealing and grain growth issues, leading to defects like hump and pit defects, which result in increased sheet resistance over time.
Innovation Solution
Incorporating a carbon-rich copper layer between copper main layers to block grain growth, thereby reducing strain and preventing defects, using an electroplating technique with specific carbon concentration and thickness ratios to form the copper layer structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If copper layers are formed using conventional electroplating, then copper layers can be deposited to fill vias and trenches, but self-annealing and grain growth occur leading to hump and pit defects and increased sheet resistance
Solution Approach 1:
The copper layer is segmented into multiple sub-layers by introducing carbon-rich copper layers at specific positions within the copper structure. These carbon-rich layers act as barriers that divide the continuous copper layer into discrete segments, preventing uncontrolled grain growth across the entire layer while maintaining electrical connectivity.
Solution Approach 2:
Carbon-rich copper layers are introduced as intermediary layers between the main copper layers. These intermediary layers serve as grain growth barriers that mediate the interaction between adjacent copper grains, preventing direct grain boundary formation and the associated defects while maintaining the overall copper layer integrity.
2Productivity
If copper grain growth is allowed to proceed naturally, then copper layers can be formed efficiently, but hump and pit defects occur reducing manufacturing quality
Solution Approach 1:
Carbon-rich copper layers are strategically positioned within the copper structure to preemptively counteract grain growth before it can lead to defect formation. These preliminary barrier layers prevent the development of hump and pit defects by blocking grain boundary migration at critical stages of grain growth.
Solution Approach 2:
The copper layer structure is transformed into a composite material system consisting of copper matrix with embedded carbon-rich copper layers. This composite structure combines the electrical conductivity of copper with the grain growth inhibition properties of carbon-rich layers, achieving both productivity and precision requirements.
3Reliability
If carbon-rich copper layers are added to block grain growth, then sheet resistance stability improves, but manufacturing process complexity increases
Solution Approach 1:
Rather than uniformly modifying the entire copper layer, carbon-rich copper layers are introduced only at specific local positions where grain growth control is most critical. This localized approach maintains sheet resistance stability while minimizing the overall structural complexity and maintaining compatibility with existing manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The carbon-rich copper layer structure effectively slows down the drop in sheet resistance, reducing defects and maintaining performance over time, thus enhancing the reliability and efficiency of copper layer manufacturing.
Implementation Method 1
the carbon-rich copper layer between the copper layers can block or eliminate the growth of copper grains in the copper layer structure
Implementation Method 2
using an electroplating technique with specific carbon concentration and thickness ratios to form the copper layer structure
Data Source
AI summary
In a method for manufacturing an interconnect structure, a dielectric layer is removed to form a first recess and a second recess. The first recess is below the second recess. A first metal layer is deposited to fill the first recess and a first portion of the second recess. A carbon-containing layer is deposited over the first metal layer to fill a second portion of the second recess, which is over the first portion. A second metal layer is deposited over the carbon-containing layer to fill a third portion of the second recess, which is over the second portion. A carbon concentration of the carbon-containing layer is greater than a carbon concentration of the first metal layer and a carbon concentration of the second metal layer, and the carbon concentration of the first metal layer is substantially the same as the carbon concentration of the second metal layer.


