Selective Liner Deposition on Semiconductor Sidewalls Using Carbon
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving selective deposition of layers on substrates with minimal dependence on the film underneath, particularly in the context of device miniaturization and increasing circuit integration, where traditional methods rely heavily on the chemical nature of the film already present on the substrate surface.
Innovation Solution
A method involving the deposition of a carbon layer on a semiconductor device, followed by selective deposition of a liner layer on the sidewall surface over the carbon layer, using techniques like CVD or ALD, and subsequent etching to control surface termination, enabling selective deposition of materials such as nitride or metal oxide.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional selective deposition methods are used that rely on the chemical nature of the underlying film, then deposition selectivity can be achieved, but the process becomes highly dependent on the specific film characteristics and requires precise control of multiple parameters
Solution Approach 1:
A carbon layer is introduced as an intermediary between the underlying film and the liner layer deposition. This carbon layer serves as a universal surface that enables selective deposition through its specific surface properties rather than relying on the chemical nature of the underlying film. The carbon layer acts as a mediator that decouples the deposition process from the underlying film characteristics, simplifying process control while maintaining high selectivity.
Solution Approach 2:
The deposition process is segmented into distinct stages: first depositing a carbon layer, then performing selective liner layer deposition on specific surfaces (sidewalls versus bottom). This segmentation allows each stage to be optimized independently, with the carbon layer preparation stage creating the appropriate surface conditions for subsequent selective deposition, thereby reducing overall process complexity.
2Manufacturing precision
If selective deposition is achieved through surface pretreatments to activate or deactivate surfaces, then deposition control is improved, but the process requires additional processing steps and increases manufacturing complexity
Solution Approach 1:
The carbon layer deposition and surface preparation steps are merged into a single integrated process. The carbon layer is deposited directly onto the underlying film and simultaneously serves both as the prepared surface and as part of the final structure. This merging eliminates the need for separate pretreatment steps, reducing manufacturing complexity while maintaining precise deposition control.
3Manufacturing precision
If traditional inhibitors are used that are specific to metal versus dielectric surfaces or specific reactive groups, then selective deposition can be achieved, but the method has strong dependence on the film underneath and limits versatility
Solution Approach 1:
The carbon layer serves multiple functions universally across different underlying film types. It provides a consistent surface for selective deposition regardless of whether the underlying film is metal, dielectric, or other materials. This universal approach allows the same deposition process to be applied across various substrate types without requiring film-specific inhibitor selection, thereby enhancing method versatility while maintaining deposition selectivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for selective deposition of materials with high selectivity and conformality, reducing reliance on underlying film characteristics and enhancing process control, thereby supporting device miniaturization and circuit integration.
Implementation Method 1
depositing a carbon layer including carbon on a substrate of the semiconductor device
Implementation Method 2
selectively depositing the liner layer on the sidewall surface over the carbon surface
Implementation Method 3
etching to control surface termination
Data Source
AI summary
Methods of depositing a liner layer in a semiconductor device are described. In some embodiments, the method includes depositing a carbon layer including carbon on a substrate, the substrate having at least one feature including a sidewall surface and the carbon layer having a carbon surface; and selectively depositing the liner layer on the sidewall surface over the carbon surface. In other embodiments, the method includes depositing a carbon layer comprising carbon in a bottom second portion of a substrate feature selectively over a top first portion of the substrate feature, the top first portion having a sidewall surface, the carbon layer having a carbon surface; etching the carbon surface; and depositing the conformal layer on the sidewall surface of the top first portion, the conformal layer deposited on the sidewall surface selectively over the carbon surface.