Carbon-Embedded Silicon Substrate Heat Release Mechanism

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Solution Overview

Problem

Current electronic devices lack an effective heat release mechanism that improves heat resistance and efficiency, particularly in the substrate itself, necessitating a solution for enhanced heat dissipation with a simple configuration.

Innovation Solution

A substrate with a heat release mechanism featuring high heat-conducting materials, such as carbon nanotubes (CNTs), embedded in holes on the rear surface and sealed with a conductive film, combined with a sealing material to create an efficient heat conduction pathway.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If conventional heat release mechanisms are used, then the device structure remains simple, but heat release performance is insufficient

Engineering Contradiction:
Improveheat release performanceVSAvoidstructure complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The substrate is divided into multiple regions with through-holes formed at specific locations. High heat-conducting materials are segmented into multiple discrete structures filling these holes, creating a distributed heat release network rather than a single centralized heat sink, thereby improving overall heat dissipation efficiency.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention combines the substrate material with high heat-conducting materials (such as diamond, cubic boron nitride, or metal materials) to form a composite structure. This composite approach leverages the superior thermal conductivity of the high heat-conducting materials while maintaining the structural integrity of the substrate, achieving enhanced heat release performance.

Inventive Principle:
Principle #40Composite materials

2Temperature

If high heat-conducting materials are embedded in holes, then heat conductivity improves, but contamination risk increases

Engineering Contradiction:
Improveheat conductivityVSAvoidcontamination protection
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The high heat-conducting material is nested within the through-holes of the substrate, creating a protected internal structure. The substrate material acts as a protective shell around the high heat-conducting material, shielding it from external contamination while maintaining thermal contact pathways for efficient heat conduction.

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The substrate serves as an intermediary structure between the high heat-conducting materials and the external environment. It provides both thermal conduction pathways and protective barrier functions, mediating between the need for high heat conductivity and the need for contamination protection.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables highly effective and reliable heat release in electronic devices, such as semiconductor devices, by utilizing the superior heat conductivity of CNTs and ensuring contamination protection through sealing, resulting in improved thermal management with a relatively simple setup.

Implementation Method 1

a first high heat-conducting material that is higher in heat conductivity than the substrate and is formed in a plurality of first holes formed in the rear surface of the substrate

Methodology Applied
Scientific EffectHeat conduction: Conduction (thermal)

Data Source

PatentUS9991187B2Electronic device and method for manufacturing the same, and substrate structure and method for manufacturing the same
Publication Date: 2018.06.05 FUJITSU LTD
  • US9991187B2 patent drawing
  • US9991187B2 patent drawing
  • US9991187B2 patent drawing

AI summary

A semiconductor device includes: a silicon substrate that includes a heat release mechanism formed on a rear surface thereof; and an element layer that includes a transistor element and is formed on a front surface of the silicon substrate, the heat release mechanism including: a carbon material being a high heat-conducting material such as a CNT that is higher in heat conductivity than the silicon substrate and is formed in a plurality of first holes formed in the rear surface of the silicon substrate; and a carbon material being a heat-conductive film such as a multilayer graphene film that is thermally connected to the CNT in a manner to cover a rear surface side of the silicon substrate. This configuration provides a carbon material-embedded silicon substrate realizing very efficient heat release with a relatively simple configuration to obtain a highly-reliable electronic device.