Carbon-Containing Conductive Via Structure for Self-Aligned Reliability
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Solution Overview
Problem
The challenge of forming reliable semiconductor devices at smaller sizes is exacerbated by the complexity of fabrication processes as feature sizes continue to decrease, making it difficult to maintain device integrity and prevent issues like short circuits.
Innovation Solution
A semiconductor device structure is developed with a carbon-containing conductive structure formed using a catalyst layer to facilitate the growth of carbon nanotubes or graphene, which provides enhanced electrical and thermal conductivity while minimizing overlay shifts and preventing short circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional fabrication processes are used to form conductive structures at smaller feature sizes, then manufacturing complexity increases, but device reliability deteriorates due to increased risk of short circuits and processing difficulties
Solution Approach 1:
A catalyst layer is introduced as an intermediary between the dielectric layer and the conductive structure. This catalyst layer facilitates the formation of carbon-containing conductive structures through chemical vapor deposition while preventing direct contact that could cause short circuits. The catalyst layer acts as a mediator that enables precise control of conductive material formation at small feature sizes without compromising device reliability
Solution Approach 2:
The invention changes the material composition parameters by incorporating carbon-containing materials with specific atomic percentages (e.g., 70-95% carbon) and controlling the catalyst layer composition (e.g., 1-10% metal content). These parameter changes enable the formation of highly conductive structures at small dimensions while maintaining reliability through controlled material properties rather than relying solely on geometric scaling
2Reliability
If conventional conductive materials are used, then electrical conductivity is achieved, but thermal management becomes difficult leading to heat buildup
Solution Approach 1:
The conductive structure is formed as a composite material containing carbon (70-95 atomic %) combined with other elements such as silicon, oxygen, and metal atoms from the catalyst layer. This composite structure provides both excellent electrical conductivity and superior thermal conductivity, enabling simultaneous achievement of electrical performance and thermal management in miniaturized devices
3Manufacturing precision
If precise alignment is required for small feature sizes, then overlay precision must be increased, but fabrication complexity and cost increase
Solution Approach 1:
The catalyst layer performs multiple functions simultaneously: it serves as a template for conductive structure formation, provides alignment reference for subsequent processing steps, and enables self-aligned growth of carbon-containing materials. This self-service approach to the catalyst layer eliminates the need for separate alignment procedures and reduces fabrication complexity while maintaining high overlay precision
Solution Approach 2:
The catalyst layer is formed in advance with precise patterns before the conductive structure deposition. This preliminary patterning establishes the exact locations and dimensions of future conductive features, enabling subsequent self-aligned formation without requiring additional alignment steps during the conductive material deposition process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The carbon-containing conductive structure enhances electrical and thermal conductivity, improves device reliability, and reduces the risk of short circuits by utilizing a self-aligned growth method that ensures precise alignment and minimal damage to surrounding dielectric layers.
Implementation Method 1
a catalyst layer to facilitate the growth of carbon nanotubes or graphene
Implementation Method 2
enhances electrical and thermal conductivity
Implementation Method 3
enhances electrical and thermal conductivity
Data Source
AI summary
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a conductive structure over the substrate. The semiconductor device structure also includes a catalyst structure over the conductive structure and a carbon-containing conductive via on the catalyst structure. A top of the catalyst structure is closer to the substrate than a top of the carbon-containing via, and a bottom of the carbon-containing conductive via is closer to the substrate than the top of the catalyst structure.