Carbonized Dopant Layer Thermal Diffusion for Selective Semiconductor Doping
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Solution Overview
Problem
Current methods for doping impurities into semiconductor device layers, such as epitaxial growth and ion implantation, are either non-selective or result in lattice damage and require subsequent annealing processes.
Innovation Solution
A method involving the application of a carbonized dopant layer with dopant impurities over a device layer, followed by heat treatment to thermally diffuse the impurities, which can be selectively patterned and removed to achieve conformal or selective doping without damaging the lattice.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ion implantation is used to dope impurities, then selective doping can be achieved, but lattice damage is caused and subsequent annealing is required
Solution Approach 1:
The patent replaces the mechanical ion implantation process with a thermal diffusion process using a carbonized dopant layer. Instead of physically implanting ions that damage the lattice, the invention uses thermal energy to diffuse dopants into the semiconductor substrate, eliminating lattice damage while maintaining selective doping capability through patterned carbonized layers
Solution Approach 2:
The patent changes the doping mechanism from mechanical ion implantation to thermal diffusion by controlling temperature parameters. The carbonized dopant layer is heated to specific temperatures (e.g., 900-1100°C) to enable controlled diffusion of dopants into the substrate, transforming the process from a damaging mechanical operation to a controlled thermal process
2Productivity
If epitaxial growth is used to dope impurities, then doping can be performed, but the process is non-selective and conformal
Solution Approach 1:
The patent applies local quality by creating patterned carbonized dopant layers that are present only in specific regions where doping is desired. The carbonized layer can be selectively formed, patterned, or removed to provide spatially selective doping, unlike conformal epitaxial growth that deposits uniformly across the entire substrate surface
3Manufacturing precision
If ion implantation is used, then doping can be performed, but additional annealing process steps are required
Solution Approach 1:
The patent merges the doping process with the existing thermal processing steps already present in semiconductor manufacturing. The carbonized dopant layer approach allows doping to occur during standard annealing or thermal processing steps, eliminating the need for separate dedicated annealing steps required after ion implantation and reducing overall process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for efficient, selective, and high-quality doping of semiconductor device layers with minimal lattice damage, enabling the formation of various semiconductor device structures like transistors and MOSFETs with precise dopant distribution.
Implementation Method 1
heat treating the carbonized dopant layer to thermally diffuse the dopant impurities into the device layer
Data Source
AI summary
A method for doping impurities into a device layer includes providing a carbonized dopant layer including one or more dopant impurities over a device layer and heat treating the carbonized dopant layer to thermally diffuse the dopant impurities into the device layer.