Carrier Feed Ring Segmentation for Selective CVD
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Solution Overview
Problem
Existing chemical vapor deposition (CVD) methods face challenges in achieving deposition selectivity, particularly at low temperatures, due to complex surface chemistry and competing reactions, which affect the growth of silicon (Si) and silicon-germanium (SiGe) films.
Innovation Solution
A processing chamber with a carrier and feed ring is designed to switch between reduced-pressure and high-vacuum environments, incorporating a radical source and a high-vacuum pump to enhance film growth selectivity by controlling gas-phase reactions and surface interactions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If reduced pressure CVD is used to enhance film uniformity and growth rate, then deposition selectivity deteriorates due to complex surface chemistry and competing reactions
Solution Approach 1:
The processing chamber is divided into two distinct pressure zones: a reduced-pressure zone (1-700 Torr) for the substrate and processing volume, and a high-vacuum zone (10^-3 to 10^-6 Torr) for the carrier and feed ring. This segmentation allows each zone to operate under optimal pressure conditions independently, enabling selective deposition while maintaining film uniformity.
Solution Approach 2:
The carrier and feed ring are extracted from the main processing volume and placed in a separate high-vacuum environment. This extraction isolates the precursor delivery mechanism from the deposition zone, allowing precise control over precursor introduction while minimizing unwanted gas-phase reactions and improving deposition selectivity.
2Object-generated harmful factors
If low temperature processing is used for Si and SiGe epitaxy, then deposition selectivity improves, but film growth rate and uniformity deteriorate
Solution Approach 1:
Different regions of the processing chamber are maintained at different pressures: the substrate region operates at reduced pressure (1-700 Torr) to enhance film uniformity and growth rate, while the carrier and feed ring region operates at high vacuum (10^-3 to 10^-6 Torr) to improve deposition selectivity. This local quality differentiation allows simultaneous optimization of both parameters.
Solution Approach 2:
The system dynamically controls pressure parameters in different zones of the chamber. By maintaining reduced pressure at the substrate for uniform film growth while simultaneously maintaining high vacuum at the carrier/feed ring for selective deposition, the system achieves both low-temperature selectivity and high-quality film formation.
3Object-generated harmful factors
If high vacuum environment is used to minimize gas-phase reactions, then deposition selectivity improves, but film growth rate decreases
Solution Approach 1:
The chamber is segmented into two pressure zones: high vacuum (10^-3 to 10^-6 Torr) for the carrier and feed ring to minimize gas-phase reactions and improve selectivity, and reduced pressure (1-700 Torr) for the substrate to maintain high film growth rates. This segmentation allows both objectives to be achieved simultaneously in their respective zones.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system provides improved deposition selectivity and film purity by minimizing unwanted gas and contaminant interactions, extending the working-pressure range, and enabling in-situ cleaning, thereby enhancing the precision of Si and SiGe film growth.
Implementation Method 1
a high-vacuum pump in fluid communication with a ring vacuum port disposed on a second side of the ring body
Implementation Method 2
a radical source coupled to at least one ring gas port on a first side of the ring body
Implementation Method 3
at lower pressures, there are fewer gas-phase reactions competing with surface reactions, leading to enhanced film uniformity and purity. Second, longer mean free path of gas molecules at lower pressures results in increased film growth rates
Implementation Method 4
During RPCVD, the substrate is heated to temperatures ranging from 400° C. to 1000° C., and controlled rates of precursor gases are introduced into the reactor
Implementation Method 5
Reduced pressure chemical vapor deposition (RPCVD) is a specialized method of chemical vapor deposition carried out at pressures below atmospheric levels
Data Source
AI summary
Embodiments of the disclosure provided herein include an apparatus and system for semiconductor processing. The apparatus includes a processing chamber. The processing chamber includes a substrate support disposed within a processing volume, a controller coupled to the processing chamber, and a carrier and feed ring disposed around the processing volume. The carrier and feed ring includes a ring body, a radical source coupled to at least one ring gas port on a first side of the ring body, and a high-vacuum pump in fluid communication with a ring vacuum port disposed on a second side of the ring body.