Carrier Ring Edge Profiles for Wafer Bevel Deposition Control
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Solution Overview
Problem
Current carrier ring designs in substrate processing systems allow unacceptable deposition on the front side and bevel edge of semiconductor wafers, with inadequate control over deposition on the back side and bevel edge.
Innovation Solution
The development of various carrier ring designs with specific geometric profiles and through holes to control the flow of process gases and plasma effects, reducing or eliminating deposition on the front side and bevel edge by optimizing the edge profiles and gas flow management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional carrier ring designs are used, then deposition on the back side of the wafer is achieved, but unacceptable deposition occurs on the front side and bevel edge
Solution Approach 1:
The carrier ring is divided into multiple distinct portions (first portion descending vertically, second portion extending horizontally, third portion descending vertically, fourth portion extending horizontally, fifth portion descending at acute angle, sixth portion extending horizontally) to create different functional zones. Each portion addresses specific deposition control needs at different locations around the wafer, allowing precise control over front side, bevel edge, and back side deposition independently.
Solution Approach 2:
Different portions of the carrier ring provide different local structures tailored to specific requirements: the first portion controls deposition near the front side, the acute-angled fifth portion targets bevel edge deposition, and the overall structure maintains uniform deposition on the back side. This localized structural differentiation enables precise deposition control on different wafer surfaces.
2Manufacturing precision
If carrier ring structures are added to control deposition, then deposition precision is improved, but device complexity increases
Solution Approach 1:
The multi-portion carrier ring structure performs multiple functions simultaneously: it controls deposition on the front side, prevents deposition on the bevel edge, and maintains uniform deposition on the back side. This single integrated structure replaces what would otherwise require multiple separate components or complex process adjustments, achieving diverse deposition control goals with one element.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These designs effectively minimize deposition on the front side and bevel edge while maintaining uniformity on the back side, improving the precision and efficiency of the deposition process.
Implementation Method 1
control the flow of process gases and plasma effects
Implementation Method 2
control the flow of process gases and plasma effects
Data Source
AI summary
Various carrier ring designs and configurations to control an amount of deposition at a wafer's front side and bevel edge are provided. The carrier ring designs can control the amount of deposition at various locations of the wafer while deposition is performed on the wafer's back side, with no deposition desired on the front side of the wafer. These locations include front side, edge, and back side of bevel; and front and back side of the wafer. Edge profiles of the carrier rings are designed to control flow of process gases, flow of front side purge gas, and plasma effects. In some designs, through holes are added to the carrier rings to control gas flows. The edge profiles and added features can reduce or eliminate deposition at the wafer's front side and bevel edge.