Carrier Ring Edge Profiles and Holes for Wafer Bevel Deposition

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Solution Overview

Problem

Current carrier ring designs in substrate processing systems allow unacceptable deposition on the front side and bevel edge of semiconductor wafers, with inadequate control over deposition at these locations.

Innovation Solution

The introduction of various carrier ring designs with specific geometric features and through holes that control gas flow and plasma effects, including acute angles and strategically placed holes, to minimize or eliminate deposition at the wafer's front side and bevel edge.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional carrier ring designs are used, then the structure is simple and easy to manufacture, but deposition on the wafer front side and bevel edge becomes unacceptable

Engineering Contradiction:

Improvedeposition control on wafer front side and bevel edgeVSAvoidcarrier ring structure complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The carrier ring is divided into multiple distinct portions (first portion descending vertically, second portion extending horizontally, third portion descending vertically, fourth portion extending horizontally, fifth portion descending at acute angle, sixth portion extending horizontally) to control deposition at different locations. This segmentation allows each portion to address specific deposition control needs, resolving the contradiction between deposition precision and structural simplicity.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different portions of the carrier ring are designed with different geometries and orientations to address local deposition control needs. The acute angle portions specifically target bevel edge deposition, while vertical and horizontal portions control front side deposition. This local differentiation enables precise deposition control without requiring complete structural redesign.

Inventive Principle:

Principle #3Local quality

2Manufacturing precision

If carrier ring designs with acute angles and through holes are introduced, then deposition control on wafer front side and bevel edge improves, but device complexity increases

Engineering Contradiction:

Improvedeposition uniformity on wafer back sideVSAvoidcarrier ring geometric features

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The carrier ring incorporates multiple through holes distributed across different portions, with each hole serving specific deposition control functions. The through holes in acute angle portions control bevel edge deposition, while holes in other portions control front side deposition. This segmented approach maintains film uniformity while managing the complexity through functional distribution.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The carrier ring design modifies geometric parameters including acute angles, through hole positions, and portion dimensions to optimize deposition control. By carefully selecting and adjusting these parameters, the design achieves improved deposition uniformity while keeping the structural changes manageable and systematic rather than arbitrary.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

These designs effectively reduce or prevent deposition at the wafer's front side and bevel edge, maintaining uniform film deposition on the back side without detrimental effects on process gas flow or film uniformity.

Implementation Method 1

gas mixtures including one or more precursors are introduced into the processing chamber, and plasma is struck to activate chemical reactions

Methodology Applied

Scientific EffectPlasma enhanced chemical vapor deposition: Plasma Enhanced Chemical Vapour Deposition

Implementation Method 2

sputtering physical vapor deposition (PVD) process

Methodology Applied

Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Data Source

PatentUS11837495B2Carrier ring designs for controlling deposition on wafer bevel/edge

Publication Date: 2023.12.05 LAM RES CORP

AI summary

Various carrier ring designs and configurations to control an amount of deposition at a wafer's front side and bevel edge are provided. The carrier ring designs can control the amount of deposition at various locations of the wafer while deposition is performed on the wafer's back side, with no deposition desired on the front side of the wafer. These locations include front side, edge, and back side of bevel; and front and back side of the wafer. Edge profiles of the carrier rings are designed to control flow of process gases, flow of front side purge gas, and plasma effects. In some designs, through holes are added to the carrier rings to control gas flows. The edge profiles and added features can reduce or eliminate deposition at the wafer's front side and bevel edge.