Carrier Segmentation for IC Substrate Separation
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Solution Overview
Problem
The manufacturing process of IC integrated substrates faces challenges in achieving high size-precision and efficient separation from carriers without increasing production costs, as conventional methods are complex and costly, such as solvent and laser ablation.
Innovation Solution
A method involving a carrier with a first dielectric layer attached to the IC integrated substrate, allowing natural separation with minimal external force, using materials that provide adhesion during processing but enable easy separation through techniques like tape or vacuum suction, without damaging the structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional separation methods (solvent or laser ablation) are used, then the IC integrated substrate can be separated from the carrier, but the manufacturing cost increases and the process becomes complex
Solution Approach 1:
The patent divides the carrier into multiple sections with different adhesion characteristics. The first carrier section has strong adhesion to the first dielectric layer to maintain stability during processing, while the second carrier section has weak adhesion to enable easy separation. This segmentation allows different functional requirements to be met in different regions of the same carrier.
Solution Approach 2:
The patent applies different adhesion qualities to different regions of the carrier. The first carrier section is designed with high adhesion strength (using materials like silicon oxide or silicon nitride) to provide stability during manufacturing, while the second carrier section is designed with low adhesion strength (using materials like silicon dioxide or released silicon nitride) to facilitate easy separation. This local differentiation resolves the contradiction between needing strong adhesion for stability and weak adhesion for easy separation.
2Manufacturing precision
If strong adhesion is used between carrier and dielectric layer, then size stability during processing is improved, but separation becomes difficult and costly
Solution Approach 1:
The carrier is segmented into two distinct sections: a first carrier section with strong adhesion properties and a second carrier section with weak adhesion properties. This allows the structure to simultaneously achieve size stability during processing (through the strong adhesion section) and easy separation (through the weak adhesion section).
Solution Approach 2:
Different adhesion strengths are applied locally to different sections of the carrier. The first carrier section uses materials and structures optimized for strong adhesion (such as silicon oxide or silicon nitride layers) to ensure size stability, while the second carrier section uses materials optimized for weak adhesion (such as silicon dioxide or released silicon nitride) to enable easy separation without external forces.
3Ease of manufacture
If weak adhesion is used between carrier and dielectric layer, then separation becomes easy, but size stability during processing deteriorates
Solution Approach 1:
The carrier is divided into two functional sections: the first carrier section provides strong adhesion for size stability during processing, while the second carrier section provides weak adhesion for easy separation. This segmentation allows weak adhesion to be applied only where needed for separation without compromising overall size stability.
Solution Approach 2:
The patent applies weak adhesion properties locally to the second carrier section while maintaining strong adhesion in the first carrier section. This localized application of weak adhesion enables easy separation in the second section without affecting the size stability provided by the first section during processing.
4Ease of manufacture
If external forces are applied for separation, then separation can be achieved, but the risk of damaging the IC integrated substrate increases
Solution Approach 1:
The second carrier section is designed with inherently weak adhesion properties that enable the IC integrated substrate to separate from the carrier automatically without requiring external forces. The weak adhesion is sufficient to allow separation through minimal actions like tape application or vacuum suction, eliminating the need for forceful separation methods that could damage the substrate.
Solution Approach 2:
The patent creates a local region (second carrier section) with weak adhesion properties that enables gentle, damage-free separation. This localized weak adhesion zone allows the substrate to be released without applying stress to the entire structure, thereby minimizing the risk of damage to the IC integrated substrate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables easy, fast, and low-cost separation of IC integrated substrates from carriers, improving size-precision and flexibility in electronic device manufacturing with multilayer interconnection structures and semiconductor devices.
Implementation Method 1
a first dielectric layer attached to the carrier
Data Source
AI summary
The present invention provides a structure combining an IC integrated substrate and a carrier, which comprises a carrier and an IC integrated substrate formed on the carrier. The IC integrated substrate has a first dielectric layer attached to the carrier. The materials of the carrier and the first dielectric layer are selected to prevent the IC integrated substrate from peeling off the carrier during processing and to allow the IC integrated substrate to naturally separate from the carrier after being cut, through the adhesion between the carrier and the first dielectric layer. The present invention also provides a method of manufacturing the above structure and a method of manufacturing electrical devices using the above structure.