Carrier Substrate with Segmented Metal Layers for Sawing Stability
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Solution Overview
Problem
The challenge in semiconductor packaging is to prevent separation during the sawing process of carrier substrates, which affects the quality and yield of organic interposer packages, especially when using glass or organic substrates, and to achieve a fine pad pitch of tens of micrometers while maintaining flatness and cost-effectiveness.
Innovation Solution
A carrier substrate design with a core layer, a first metal layer, a release layer, and a second metal layer, where at least one of these layers is patterned into unit portions smaller than the core layer area, preventing separation during sawing and ensuring improved flatness and durability, allowing for efficient manufacturing of semiconductor packages with miniaturized interposers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a carrier substrate with full-area metal and release layers is used, then electrical connectivity and structural integrity are maintained, but separation occurs during the sawing process
Solution Approach 1:
The metal layer and release layer are divided into multiple isolated unit pattern portions rather than forming continuous full-area layers. This segmentation prevents the layers from acting as a unified structure that would separate during sawing, while still providing necessary electrical connectivity and structural support at each unit location.
Solution Approach 2:
The carrier substrate structure is made non-uniform by creating distinct unit pattern portions with metal and release layers only in specific localized areas rather than uniformly across the entire substrate. This local quality approach maintains structural integrity where needed while preventing harmful separation during processing.
2Object-generated harmful factors
If the carrier substrate layers are patterned into smaller unit portions, then separation during sawing is prevented, but manufacturing complexity increases
Solution Approach 1:
The patterning process creates segmented unit portions that can be manufactured using standard photolithography and etching techniques. The segmentation into regular patterns makes the manufacturing process systematic rather than complex, as each unit can be formed using repeated processing steps across the substrate.
Solution Approach 2:
The metal and release layers are patterned into unit portions before the sawing process, so that the separation prevention structure is already in place during manufacturing. This preliminary patterning action ensures that subsequent processing steps encounter pre-prepared structures that prevent separation.
3Productivity
If the interposer is miniaturized to achieve fine pad pitch, then packaging density is improved, but carrier flatness requirements become more stringent
Solution Approach 1:
The segmented unit pattern portions create a carrier substrate structure that is less prone to warping and deformation during processing. By dividing the continuous layers into isolated units, internal stresses are reduced, maintaining better flatness even when the interposer size is reduced for fine pad pitch applications.
Solution Approach 2:
The non-uniform distribution of metal and release layers in localized unit portions allows for better stress management across the carrier substrate. This local quality approach maintains overall flatness while enabling the miniaturized interposer structures needed for high-density packaging.
Data Source
AI summary
A carrier substrate comprises a core layer, a first metal layer disposed on the core layer, a release layer disposed on the first metal layer, and a second metal layer disposed on the release layer. At least one layer among the first metal layer, the release layer, and the second metal layer is disposed in a plurality of unit pattern portions having an area smaller than an area of the core layer. In addition, a method of manufacturing a semiconductor package using the carrier substrate is provided.