Carrier Transport Simulation in Semiconductor Devices
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Solution Overview
Problem
Current methods lack an effective way to study carrier transport in semiconductor devices, which is crucial for the development and stability of modern integrated circuits as feature sizes decrease and quantum effects become more significant.
Innovation Solution
A carrier transport simulation method that determines physical simulation models, initial and boundary conditions, and mathematical equations to calculate carrier density in semiconductor devices, using models for semi-classical, closed quantum, and open quantum systems, including Poisson's equations and Schrödinger equations, to simulate carrier transport.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If quantum effects are considered in carrier transport simulation, then accuracy of electrical performance prediction is improved, but complexity of simulation model and calculation difficulty increase
Solution Approach 1:
The simulation domain is divided into multiple regions (e.g., region 101, 102, 103 in the semiconductor device) with different simulation models applied to different regions. The Poisson equation is solved in certain regions while the Schrödinger equation is solved in other regions, allowing quantum effects to be captured where needed without unnecessarily complicating the entire simulation model.
Solution Approach 2:
The patent employs different physical models and mathematical equations for different simulation scenarios. By changing the model parameters and selecting appropriate equations (Poisson's equation for semi-classical, Schrödinger equation for quantum systems), the simulation can accurately capture quantum effects when necessary while maintaining computational efficiency when quantum effects are negligible.
2Adaptability or versatility
If multiple physical models (semi-classical, closed quantum, open quantum) are used to cover different simulation scenarios, then versatility of the simulation method is improved, but difficulty of selecting and implementing the appropriate model increases
Solution Approach 1:
The patent develops a unified simulation framework that can handle multiple physical scenarios (semi-classical, closed quantum, open quantum systems) within a single methodological structure. The same general approach of determining physical models, initial conditions, and boundary conditions can be applied to different scenarios, with the specific mathematical equations varying based on the physical requirements.
Solution Approach 2:
Different physical models are selected and implemented by changing key parameters and equations within the simulation framework. The patent provides guidance on selecting appropriate models based on physical conditions, making the complexity manageable through systematic parameter adjustment rather than requiring entirely separate implementation approaches.
3Measurement precision
If quantum effects are considered in carrier transport, then accuracy of electrical performance prediction is improved, but computation time and resource consumption increase
Solution Approach 1:
The simulation domain is divided into multiple regions (e.g., region 101, 102, 103 in the semiconductor device) with different simulation models applied to different regions. The Poisson equation is solved in certain regions while the Schrödinger equation is solved in other regions, allowing quantum effects to be captured where needed without unnecessarily complicating the entire simulation model.
Solution Approach 2:
Instead of applying quantum mechanical calculations throughout the entire semiconductor device, the patent applies quantum effects (Schrödinger equation) only in specific regions where quantum confinement is significant, such as near the surface or in narrow channels. This partial application of quantum mechanics reduces computational cost while maintaining accuracy in the critical regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables accurate simulation of carrier transport in semiconductor devices, improving understanding and development of integrated circuits by providing detailed carrier density distributions and electrostatic potentials, thus addressing the lack of effective methods in current technologies.
Implementation Method 1
A mathematical physical equation corresponding to the model for a semi-classical system is a Poisson's equation
Implementation Method 2
a mathematical physical equation corresponding to the model for a closed quantum system is the Poisson's equation and a Schrödinger equation
Data Source
AI summary
Disclosed are a carrier transport simulation method, a carrier transport simulation apparatus, a medium, and an electronic device. A physical simulation model, and an initial condition and/or a boundary condition for carrier transport in a semiconductor device are determined; a mathematical physical equation correspondingly for solving the physical simulation model is determined; and a carrier density in the semiconductor device is determined based on the initial condition and/or the boundary condition, and the mathematical physical equation, to implement a simulation of carrier transport in the semiconductor device, so as to implement a simulation of carrier transport in a semiconductor device.