Cascode Transistor Biasing for Standby Leakage Reduction

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Solution Overview

Problem

Transistors in electronic devices experience leakage currents, such as gate-induced drain leakage (GIDL) and subthreshold leakage (ISUB), leading to increased power consumption and reduced performance, especially when in standby mode.

Innovation Solution

Implementing a cascode arrangement with transistors having a high voltage threshold (Vth) and dynamically biasing the gate of the drain-side transistor with a control signal, which reduces the voltage differential between the drain and gate/source, thereby minimizing leakage current during standby mode.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by stationary object

If transistors are used in standby mode, then device functionality is maintained, but leakage current increases power consumption

Engineering Contradiction:
Improvepower consumption in standby modeVSAvoidtransistor off-state accuracy
Core Design Contradiction:
Use of energy by stationary objectVSReliability

Solution Approach 1:

The patent applies dynamics by making the transistor threshold voltage adjustable rather than fixed. A control signal dynamically adjusts the threshold voltage of the transistor in the cascode arrangement during standby mode, optimizing the balance between leakage current reduction and off-state accuracy. This dynamic adjustment allows the system to adapt to different operating conditions and minimize power consumption while maintaining reliable transistor switching behavior.

Inventive Principle:
Principle #15Dynamics

2Loss of energy

If cascode arrangement with high Vth transistors is used, then leakage current is reduced, but device complexity increases

Engineering Contradiction:
Improveleakage currentVSAvoidtransistor configuration complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent applies parameter changes by modifying the threshold voltage parameter of the transistors in the cascode arrangement. By using high Vth transistors and dynamically adjusting their threshold voltage through control signals, the patent reduces leakage current while managing the complexity through systematic parameter optimization rather than complex circuit topologies.

Inventive Principle:
Principle #35Parameter changes

3Loss of energy

If dynamic control signal is applied to gate, then leakage current is minimized, but control circuit complexity increases

Engineering Contradiction:
Improveleakage currentVSAvoidcontrol signal circuitry
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent applies the intermediary principle by introducing a control signal as a mediator between the power supply and the transistor gates. This control signal acts as an intermediate element that dynamically adjusts the transistor threshold voltages to minimize leakage current without requiring complex control circuitry. The control signal serves as a simple yet effective intermediary that coordinates the operation of the cascode transistors during standby mode.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS10848153B2Leakage current reduction in electronic devices
Publication Date: 2020.11.24 MICRON TECHNOLOGY INC
  • US10848153B2 patent drawing
  • US10848153B2 patent drawing
  • US10848153B2 patent drawing

AI summary

Methods, systems, and devices for leakage current reduction in electronic devices are described. Electronic devices may be susceptible to leakage currents when operating in a first mode, such as an inactive (e.g., a standby) mode. To mitigate leakage current, an electronic device may include transistors coupled in cascode configuration where a gate of a drain-side transistor in the cascode configuration is configured to be biased by an adjustable (e.g., a dynamic) control signal. When the transistors are inactive (e.g., “off”), the control signal may be adjusted to prevent leakage associated with the inactive transistors. Further, a source-side transistor in the cascode configuration may be configured to have a high threshold voltage (e.g., relative to the drain-side transistor).