Cascode Gate-Drive Circuit Using Oxide Transistors for Low Power
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Solution Overview
Problem
Improvement of communication speed in semiconductor devices leads to increased power consumption, necessitating a solution that enhances communication speed while reducing power consumption and ensuring stable operation, high reliability, and high productivity.
Innovation Solution
A semiconductor device incorporating a cascode circuit with transistors and capacitors, utilizing oxide semiconductors, particularly In and Zn, to connect sources or drains of transistors to gates, and employing multi-gate transistors with back gates for improved isolation and reduced power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If communication speed is improved in semiconductor devices, then transmission speed increases, but power consumption increases
Solution Approach 1:
The patent changes the material parameter of the semiconductor from conventional silicon-based materials to oxide semiconductor materials (such as In-Ga-Zn-O). This material substitution fundamentally alters the electrical characteristics, enabling high-speed operation with low power consumption by exploiting the unique properties of oxide semiconductors including high electron mobility and ability to maintain stable electrical characteristics at low power levels.
2Speed
If communication speed is improved, then transmission performance increases, but operational stability decreases
Solution Approach 1:
The patent employs composite material structures including oxide semiconductor layers combined with specific gate electrode configurations (such as multi-gate or back-gate structures). This composite approach allows the device to achieve high-speed operation while the structured configuration provides stability and reliability by controlling carrier transport and reducing variability in operational characteristics.
3Speed
If communication speed is improved, then transmission capability increases, but device reliability in high-temperature environments decreases
Solution Approach 1:
The patent utilizes oxide semiconductor materials that inherently maintain stable electrical characteristics across a wide temperature range. The material's band structure and carrier transport properties remain consistent at elevated temperatures, allowing high-speed communication functionality to be preserved without degradation in reliability even in high-temperature operating environments.
Data Source
AI summary
A semiconductor device with low power consumption is provided. In a cascode circuit including a first transistor provided on a low power supply potential side and a second transistor provided on a high power supply potential side, a source or a drain of a third transistor and a capacitor are connected to a gate of the second transistor. A gate of the first transistor is electrically connected to a back gate of the second transistor. An OS transistor is used as the third transistor.