Cascode Rectifier Package With Wirebondless Substrate Connection

The patent removes the wirebonding connection method entirely from the assembly process. The diode arrangement and compound semiconductor component are connected through direct substrate conductive pads, extracting the harmful wirebonding element that introduces parasitic resistance and inductance while maintaining manufacturing simplicity through direct bonding techniques.

The patent creates an asymmetric connection architecture where the diode arrangement and compound semiconductor component are directly bonded to adjacent conductive pads on the substrate, eliminating the symmetric wirebonding loop. This direct pad-to-pad connection reduces the connection path length and parasitic elements while maintaining ease of assembly through controlled direct bonding processes.

The patent transitions thermal management from a planar (2D) approach to a three-dimensional (3D) approach by implementing vertical heat extraction paths. The substrate provides direct thermal conduction from the compound semiconductor component through the substrate thickness to the rear surface, allowing heat to be extracted in the vertical dimension rather than spreading laterally, thus maintaining compact footprint while effective thermal management.

The substrate serves as a dual-function intermediary that simultaneously provides electrical connection through conductive pads and thermal conduction through its bulk material. This intermediary structure enables both compact integration and effective heat extraction by conducting thermal energy from the heat-generating compound semiconductor component through the substrate to the rear surface heat sink.

The patent employs a composite device structure combining two different semiconductor materials: a diode arrangement (typically silicon-based) and a compound semiconductor component (III-nitride based). This composite configuration leverages the advantages of each material - the diode provides robust surge current capability while the compound semiconductor component delivers superior forward conduction performance, achieving enhanced overall reliability without excessive complexity.

The patent merges the diode arrangement and compound semiconductor component into a single integrated cascode rectifier package with direct substrate connections. By combining these two semiconductor devices in a cascode configuration and directly bonding them to adjacent conductive pads without wirebonding, the patent achieves both low parasitic resistance/inductance and enhanced surge current capability and forward conduction performance.