Cascoded Semiconductor Device Leakage Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices manufactured from silicon substrates face issues such as low breakdown voltages, excessive reverse leakage current, unsuitable switching characteristics, high power densities, and high manufacturing costs, while compound semiconductor substrates improve performance but are fragile and costly. Additionally, cascoded devices with III-N semiconductor materials experience reliability degradation and increased leakage due to avalanche operating mode.
Innovation Solution
A cascoded semiconductor device structure is developed, combining a silicon-based semiconductor device with a III-N semiconductor device and a protection element, where the III-N device is connected to the silicon device to form a common connection node, and the protection element is used to control leakage currents and voltage stress, utilizing a combination of silicon and III-N materials to enhance reliability and cost-efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If compound semiconductor substrates (III-N materials) are used to improve device performance, then breakdown voltage and switching characteristics are improved, but device fragility and manufacturing cost increase
Solution Approach 1:
The patent employs a composite material structure combining silicon substrate with III-N compound semiconductor layers. The silicon substrate provides mechanical strength and cost-effectiveness, while the III-N layers deliver high breakdown voltage and superior switching characteristics. This composite approach allows the device to achieve high-performance benefits without the full cost and fragility penalties of pure III-N substrates.
2Productivity
If the silicon device operates in avalanche mode to achieve switching function, then switching characteristics are improved, but leakage current increases and device reliability degrades
Solution Approach 1:
The patent introduces a protection element as an intermediary component between the silicon device and the III-N device. This protection element acts as a mediator that limits the voltage stress and avalanche current, allowing the silicon device to achieve switching function while preventing excessive leakage current and reliability degradation. The protection element absorbs the harmful effects of avalanche operation.
3Ease of operation
If the gate of the III-N device is under large stress to achieve normally-off state, then switching control is improved, but the absolute gate to source voltage exceeds pinch-off voltage causing reliability issues
Solution Approach 1:
The patent incorporates a protection element that provides beforehand cushioning against voltage stress. This element is designed to limit the maximum voltage that can appear across the III-N device gate, preventing the gate-to-source voltage from exceeding the pinch-off voltage. The cushioning effect occurs in advance, before damage can occur, ensuring reliable operation while maintaining switching control capability.
Data Source
AI summary
In accordance with an embodiment, semiconductor component includes a compound semiconductor material based semiconductor device coupled to a silicon based semiconductor device and a protection element, wherein the silicon based semiconductor device is a transistor. The protection element is coupled in parallel across the silicon based semiconductor device and may be a resistor, a diode, or a transistor. In accordance with another embodiment, the silicon based semiconductor device is a diode. The compound semiconductor material may be shorted to a source of potential such as, for example, ground, with a shorting element.