Cascoded Semiconductor Component with Protection Element
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices manufactured from silicon substrates face issues such as low breakdown voltages, excessive reverse leakage current, unsuitable switching characteristics, high power densities, and high costs, while compound semiconductor substrates are fragile and costly. Additionally, cascoded devices with III-N semiconductor materials experience reliability degradation due to avalanche operating mode, which increases leakage currents and reduces breakdown voltage.
Innovation Solution
A cascoded semiconductor device configuration using a silicon-based material in conjunction with a III-N semiconductor material, where a protection element with a threshold voltage greater than the III-N device's absolute threshold but less than the silicon device's breakdown voltage is integrated to prevent avalanche breakdown. This configuration includes a common connection node and a protection element that steers current, ensuring the silicon device operates within safe voltage limits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a silicon device is cascoded with a III-N device to achieve normally-off state, then the switching characteristics are improved, but the silicon device enters avalanche mode which degrades reliability and increases leakage currents
Solution Approach 1:
A protection element is introduced as an intermediary component between the silicon device and the III-N device. This protection element acts as a mediator that limits the voltage across the silicon device to remain below its breakdown voltage, thereby preventing avalanche breakdown while allowing the cascode structure to function properly
Solution Approach 2:
The protection element is designed with a threshold voltage that is predetermined to be greater than the III-N device's absolute threshold voltage but less than the silicon device's breakdown voltage. This preliminary voltage limitation prevents the silicon device from entering avalanche mode before harmful effects can occur
2Reliability
If compound semiconductor substrates are used to improve device performance, then breakdown voltage and switching characteristics are enhanced, but the substrates become fragile and manufacturing costs increase
Solution Approach 1:
The invention uses a composite structure combining silicon-based semiconductor material and III-N semiconductor material. The silicon device provides cost-effective manufacturing and mechanical strength, while the III-N device provides high breakdown voltage and improved switching characteristics. This composite approach leverages the advantages of both material systems
Solution Approach 2:
The semiconductor device is segmented into two distinct parts: a silicon-based device and a III-N-based device, each optimized for its specific function. The silicon device handles the cost-sensitive and mechanically critical portions, while the III-N device handles the high-voltage switching portions, allowing each material to be used where it provides the most benefit
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed configuration reduces the likelihood of silicon devices entering avalanche breakdown, enhances reliability, and maintains cost efficiency by controlling leakage currents and maintaining the midpoint voltage below the silicon device's breakdown voltage, thereby improving the overall performance and longevity of the semiconductor component.
Implementation Method 1
the silicon device often operates in avalanche mode due to high leakage currents of the III-N device operating under a high drain bias. In the avalanche operating mode, the gate of the III-N device is under a large stress because the avalanche breakdown voltage of the silicon device may exceed the breakdown voltage of the gate dielectric of the III-N device
Data Source
AI summary
In accordance with an embodiment, semiconductor component having a compound semiconductor material based semiconductor device connected to a silicon based semiconductor device and a protection element, wherein the silicon based semiconductor device is a transistor. The protection element is coupled in parallel across the silicon based semiconductor device and may be a resistor, a diode, or a transistor. In accordance with another embodiment, the silicon based semiconductor device is a diode. The compound semiconductor material may be shorted to a source of potential such as, for example, ground, with a shorting element.