Catalyst-Aided Chemical Processing for SiC and GaN
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Solution Overview
Problem
Current chemical processing methods, such as EEM and plasma CVM, face challenges in achieving high precision and efficiency for materials like SiC and GaN, particularly in maintaining a stable reference plane and avoiding lattice defects, while existing methods like CMP and halogen radical processing are limited by mechanical damage and material stability.
Innovation Solution
A catalyst-aided chemical processing method using a processing liquid with halogen-containing molecules and a catalyst like molybdenum or platinum, where the catalyst is moved relative to the workpiece to maintain a stable reference plane, with optional voltage application, light irradiation, and temperature control to enhance processing efficiency and precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If EEM method is used to process surface, then atomic-level flatness is achieved, but processing efficiency is low and cannot flatten surfaces with space wavelength of several tens of μm
Solution Approach 1:
The invention changes the processing parameters by using a catalyst platen that generates active species in situ, allowing the chemical reaction to proceed at controlled rates. This enables processing of larger surface areas (several tens of μm wavelength) while maintaining atomic-level flatness, resolving the contradiction between precision and efficiency
Solution Approach 2:
The catalyst platen acts as an intermediary that generates active species (radicals or ions) from processing liquid. This mediator enables efficient material removal while maintaining the reference plane function, achieving both high productivity and manufacturing precision simultaneously
2Productivity
If plasma CVM is used for high-efficiency processing, then processing speed increases, but reference plane stability is lost and lattice defects occur
Solution Approach 1:
The catalyst platen serves as a stable reference plane and intermediary that generates active species locally. This maintains the reference plane function while enabling high-speed processing through catalytic reactions, preventing lattice defects and maintaining surface quality
Solution Approach 2:
The invention replaces the mechanical polishing action with a chemical reaction system using catalyst-aided processing liquid. This substitution enables high-speed material removal without mechanical contact, maintaining surface quality while increasing processing speed
3Productivity
If CMP method is used for surface processing, then material removal is achieved, but mechanical damage and lattice defects are caused
Solution Approach 1:
The invention replaces mechanical polishing with a chemical reaction system where catalyst-generated active species remove material chemically. This substitution eliminates mechanical damage and lattice defects while maintaining efficient material removal capability
Solution Approach 2:
The processing mechanism changes from mechanical force to chemical reaction parameters. The catalyst platen controls the chemical reaction rate, enabling material removal without mechanical contact, thus preventing lattice defects while maintaining productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables high-precision, high-efficiency processing of hard-to-process materials like SiC and GaN over large surface wavelengths without lattice defects, using a stable reference plane and controlled chemical reactions to achieve precise surface flattening.
Implementation Method 1
bringing a solid catalyst capable of decomposing hydrogen peroxide into contact with or close proximity to a surface to be processed of a workpiece in hydrogen peroxide solution
Implementation Method 2
solid catalyst capable of decomposing hydrogen peroxide
Implementation Method 3
removing surface atoms of the surface to be processed through a chemical reaction between surface atoms and reaction species generated on the surface of the catalyst
Implementation Method 4
irradiating with light a surface to be processed of a workpiece in the hydrogen peroxide solution
Implementation Method 5
applying a voltage between the surface to be processed of the workpiece and the catalyst during the processing
Data Source
AI summary
A catalyst-aided chemical processing method can process hard-to-process materials, especially SiC, GaN, etc. whose importance as electronic device materials is increasing these days, with high processing efficiency and high precision even for a space wavelength range of not less than several tens of μm. The catalyst-aided chemical processing method comprises: putting a workpiece in a processing liquid in which halogen-containing molecules are dissolved; and moving the workpiece and a catalyst composed of molybdenum or a molybdenum compound relative to each other while keeping the catalyst in contact with or close proximity to a surface to be processed of the workpiece, thereby processing the surface of the workpiece.