Curing Catalyst Diffusion Measurement via Acid-Generated Resin Solubility
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Solution Overview
Problem
In EUV lithography, the diffusion of curing catalysts from silicon-containing films to resist upper layer films affects line edge roughness (LWR) and hole critical dimension uniformity (CDU), and existing methods require expensive exposure apparatuses to measure this diffusion effectively.
Innovation Solution
A method involving coating a substrate with a silicon-containing film and a photosensitive resin composition, followed by high energy beam irradiation to generate acid, which increases the solubility of the resin in an alkaline developer, allowing for the measurement of curing catalyst diffusion without affecting the resist upper layer film, using a low-cost exposure apparatus like KrF or a high-pressure mercury lamp.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If EUV exposure is used to measure curing catalyst diffusion, then measurement precision is improved, but device cost increases significantly
Solution Approach 1:
The patent creates a simulated EUV exposure environment using KrF excimer laser or high-pressure mercury lamp exposure apparatus. By reproducing the essential functional effects of EUV exposure (acid generation and curing catalyst diffusion) without requiring actual EUV equipment, the invention enables measurement of curing catalyst diffusion at a fraction of the cost while maintaining measurement precision
Solution Approach 2:
The invention changes the exposure parameters by using alternative light sources (KrF excimer laser at 248 nm or high-pressure mercury lamp) that can generate sufficient acid from the acid generator to trigger curing catalyst diffusion. By adjusting exposure conditions and material compositions, the patent achieves equivalent diffusion measurement effects without EUV wavelengths
2Reliability
If curing catalyst is added to silicon-containing film composition, then film formation capability is improved, but pattern quality deteriorates due to diffusion into resist upper layer
Solution Approach 1:
The patent applies a barrier layer between the silicon-containing film and the resist upper layer film before exposure. This barrier layer prevents curing catalyst diffusion into the resist upper layer during the exposure and development processes, thereby maintaining pattern quality (low LWR and high CDU) while still allowing the curing catalyst to fulfill its function in forming the silicon-containing film
Solution Approach 2:
The barrier layer acts as an intermediary substance that blocks the interaction between the curing catalyst and the resist upper layer. By introducing this intermediate layer, the patent eliminates the harmful diffusion effect while preserving the beneficial film formation capability, thus resolving the contradiction between reliability and manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the selection of curing catalysts that do not impact LWR or CDU in EUV lithography without the need for expensive EUV exposure apparatuses, enabling the reproduction of the diffusion scenario near the resist upper layer film and silicon-containing film.
Implementation Method 1
an acid generator and a solvent (b), and subsequently heating to remove the solvent (b) to prepare a substrate on which the silicon-containing film (Sf) and a resin film are formed, a solubility of the resin (A) in an alkaline developer being increased by an action of an acid, and the acid generator being to generate an acid by a high energy beam having a wavelength of 300 nm or less or an electron beam
Implementation Method 2
when the curing catalyst is diffused to the resist upper layer film at the time of exposure or after the exposure, pattern formability in the interface between the resist upper layer film and the silicon-containing underlayer film may be affected
Data Source
AI summary
A method for measuring a distance of diffusion of a curing catalyst for a thermosetting silicon-containing material includes the steps of: forming a silicon-containing film from a composition containing a thermosetting silicon-containing material, a curing catalyst and a solvent; coating the silicon-containing film with a photosensitive resin composition containing a resin whose solubility in alkaline developer is increased by the action of an acid, an acid generator and a solvent, and subsequently heating to prepare a substrate on which the silicon-containing film and a resin film are formed; irradiating the substrate with a high energy beam or an electron beam to generate an acid and heat-treating the substrate to increase the solubility of the resin in an alkaline developer by the action of the acid in the resin film; dissolving the resin film in an alkaline developer; and measuring a film thickness of the remaining resin.