Catalyst-Assisted Silicon Oxide ALD for Faster Conformal Growth
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Solution Overview
Problem
The existing Atomic Layer Deposition (ALD) and Plasma Enhanced ALD (PEALD) methods for forming thin films on semiconductor devices suffer from low film growth rates and long processing times, leading to low throughput.
Innovation Solution
A method involving the sequential supply of a silicon source, a catalyst, and an oxygen source to a substrate while applying power, with optional surface treatment, to enhance film formation and increase growth rate, using specific catalysts and gases like amines and nitrogen/hydrogen compounds.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ALD or PEALD method is used to form a thin film conformally on semiconductor device surface, then film formation precision is improved, but film growth rate decreases leading to low productivity
Solution Approach 1:
The patent changes the chemical parameters of the deposition process by introducing a catalyst (nitrogen-containing compound) and using a specific silicon source (amine compound) to enable a different reaction mechanism that achieves both conformal coverage and higher growth rates
Solution Approach 2:
The patent introduces a catalyst (nitrogen-containing compound) as an intermediary substance that facilitates the reaction between the silicon source and oxygen source, enabling faster film formation while maintaining conformal deposition quality
2Manufacturing precision
If ALD or PEALD method is used to form a thin film conformally on semiconductor device surface, then film formation precision is improved, but processing time increases
Solution Approach 1:
The patent modifies the process parameters by using a catalyst-enhanced reaction mechanism that reduces the number of cycles needed to achieve target film thickness, thereby reducing total processing time while maintaining conformal deposition
Solution Approach 2:
The patent enables more continuous and efficient film formation by reducing idle time between deposition cycles through faster reaction kinetics enabled by the catalyst, maintaining the layer-by-layer conformal deposition advantage while speeding up the overall process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves a film growth rate of about 0.5 Å/cycle or greater, significantly improving processing efficiency and throughput by promoting conformal film formation on non-planar substrate structures.
Implementation Method 1
supplying an oxygen source to the substrate while applying a first power to the reaction chamber from a power generator
Implementation Method 2
supplying a catalyst to the substrate... the catalyst may comprise a nitrogen and a hydrogen
Data Source
AI summary
A method of forming a film on a substrate comprises providing the substrate in a reaction chamber and forming the film on the substrate by repeating a cycle at least one time, wherein the forming the film comprises supplying a silicon source comprising an amine and a catalyst to the substrate, followed by supplying an oxygen source to the substrate while applying a first power to the reaction chamber from a power generator. The method further comprises performing a substrate treatment to the substrate before forming the film, wherein the film formed on the substrate is a silicon oxide.