Catalytic Conductive Layer for Low-Byproduct Trench Etching
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Solution Overview
Problem
Challenges arise during the scaling-down process of semiconductor devices, including issues with quality, yield, performance, and reliability, and the complexity of trench-etching processes that generate massive by-products requiring intensive cleaning.
Innovation Solution
A semiconductor device design featuring a catalytic conductive layer on a substrate with a trench-etching process that eliminates the need for intensive cleaning by minimizing by-product generation, achieved through the use of a catalytic conductive layer that acts as a catalyst for selective etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional trench-etching processes are used for scaling down semiconductor devices, then manufacturing capability is maintained, but massive by-products are generated requiring intensive cleaning
Solution Approach 1:
A catalytic conductive layer is introduced as an intermediary between the etchant and the substrate during trench-etching. This catalyst layer facilitates the etching reaction to proceed efficiently while being consumed in a controlled manner, thereby reducing the generation of harmful by-products compared to conventional direct etching methods
Solution Approach 2:
The invention changes the chemical parameters of the etching process by introducing a catalytic conductive layer that modifies the etching chemistry. This allows the etching reaction to proceed with different by-product profiles, reducing the need for intensive cleaning operations
2Reliability
If intensive cleaning processes are performed to remove etching by-products, then quality is improved, but fabrication cost and complexity increase
Solution Approach 1:
The catalytic conductive layer is designed to be consumed during the etching process, converting what would normally be a harmful by-product problem into a beneficial self-cleaning mechanism. The catalyst layer sacrificially reacts with the etchant, protecting the underlying structure and eliminating the need for separate intensive cleaning steps
3Productivity
If scaling down is pursued to improve computing ability, then performance is improved, but quality and yield issues increase
Solution Approach 1:
The trench-etching process is segmented into two distinct stages: first, a catalytic conductive layer is deposited on the substrate; second, the trench-etching process is performed using this catalyst layer. This segmentation allows for better control of the etching process at each stage, improving overall process reliability and yield during scaling
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design reduces fabrication costs and complexity by eliminating the need for extensive cleaning processes, thereby improving the efficiency and reliability of the semiconductor device.
Implementation Method 1
performing a trench-etching process to recess the covered portion of the substrate, resulting in a first trench
Data Source
AI summary
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; an indentation inwardly positioned in the substrate and including a bottom surface and two sidewalls; a catalytic conductive layer positioned on the bottom surface of the indentation. The bottom surface of the indentation and a top surface of the substrate are parallel to each other. The two sidewalls of the indentation are substantially vertical.