Resonant Cavity RF Amplifier Combining with Transistor Failure Tolerance
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Solution Overview
Problem
Conventional systems for combining high-power transistors require complex designs with many individual amplifier modules, leading to increased costs and decreased reliability, and often necessitate shutting down the system upon failure of a module or transistor.
Innovation Solution
A resonant cavity combined solid-state amplifier system that uses a resonant cavity with output impedance matching networks to electromagnetically couple power from multiple high-power transistors, allowing for a single combined high-power output while maintaining operation even if one or more transistors fail, through the use of redundant designs and DC power chokes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If multiple individual amplifier modules with separate transistors are used to achieve high power levels, then the required power output is improved, but the system complexity and cost increase significantly
Solution Approach 1:
The patent combines multiple transistor outputs directly into a single resonant cavity structure, merging the power combination function into one integrated device rather than using separate amplifier modules with individual combining networks. This reduces the number of discrete components and interconnections while achieving the same power combining objective.
Solution Approach 2:
The resonant cavity serves multiple functions simultaneously: it acts as the combining network for multiple transistor outputs, provides impedance matching for each transistor, and functions as the output transmission structure. This multi-functionality eliminates the need for separate combining modules and reduces overall system complexity.
2Power
If multiple individual amplifier modules are used to achieve high power levels, then the required power output is improved, but the cost increases due to multiple cables and cooling lines
Solution Approach 1:
The patent merges multiple transistor outputs into a single resonant cavity structure, eliminating the need for multiple separate microwave cables, power cables, and cooling lines that would be required for individual amplifier modules. This consolidation significantly reduces the quantity of external connections and associated costs.
3Power
If conventional amplifier modules are used, then high power output can be achieved, but reliability decreases due to more components and connections
Solution Approach 1:
The patent combines multiple transistor outputs directly into a single resonant cavity, reducing the number of external connections, cables, and inter-module interfaces. Fewer components and connections mean fewer potential failure points, thereby improving overall system reliability while maintaining high power output capability.
4Power
If individual amplifier modules are used, then high power levels can be achieved, but the system requires shutdown and component replacement upon failure
Solution Approach 1:
The patent segments the amplifier system at the transistor level rather than the module level, with each transistor independently coupled to the resonant cavity. This segmentation allows individual transistors to be isolated and replaced without affecting the entire system, enabling continuous operation with redundant transistors while maintaining high power output.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system simplifies the design, increases reliability, and allows continued operation even if one or more transistors fail, reducing complexity and costs compared to conventional systems.
Implementation Method 1
configured to electromagnetically couple power from each of the plurality of high-power transistors into the resonant cavity to provide a combined high-power output
Implementation Method 2
configured to match an impedance of each transistor to an impedance of the resonant cavity
Implementation Method 3
a resonant cavity including at least one output port coupled to a high-power transmission line. A plurality of high-power transistors are each configured to generate a variable amount of power input directly into the resonant cavity
Data Source
AI summary
A resonant cavity combined solid-state amplifier system including a resonant cavity having at least one output port coupled to a high-power transmission line. A plurality of high-power transistors are each configured to generate a variable amount of power input directly into the resonant cavity. The plurality of high-power transistors may be configured such that a failure of one or more of the plurality of high-power transistors does not substantially impede operation of the resonant cavity. A plurality of output impedance matching networks each coupled to one of the plurality of high-power transistors and extending into the resonant cavity are configured to match an impedance of each transistor to an impedance of the resonant cavity and configured to electromagnetically couple power from each of the plurality of high-power transistors into the resonant cavity to provide a combined high-power output to the high-power transmission line.