Complementary BJT Thermal Sensor Integrated Near MBC Hot Spots
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Solution Overview
Problem
Conventional thermal sensors in semiconductor ICs are not adequately close to heat sources and require additional fabrication processes, leading to inaccurate thermal measurements due to their separation from hot spots and increased complexity in manufacturing.
Innovation Solution
A complementary bipolar junction transistor (CBJT) thermal sensor is fabricated using similar processes as multi-bridge-channel transistors, with a unique structure that includes PNP and NPN BJTs, allowing for accurate temperature sensing by canceling out dopant non-uniformity and being placed closer to heat sources.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional thermal sensors are used, then thermal sensing function is provided, but measurement precision deteriorates due to separation from heat sources and additional fabrication processes are required
Solution Approach 1:
The patent merges the thermal sensor fabrication with the existing MBC transistor fabrication process. The CBJT thermal sensor uses the same fin-shaped structure formation, doping, and gate stacking processes as the MBC transistors, eliminating separate fabrication steps. This integration maintains measurement precision by placing sensors adjacent to heat sources while reducing overall device complexity through process consolidation.
Solution Approach 2:
The fin-shaped structure serves multiple functions: it acts as both the active channel for MBC transistors and as the sensing element for CBJT thermal sensors. The same doped regions and gate structures provide both transistor operation and thermal sensing capabilities, allowing a single fabrication process to produce both functional elements with high precision near heat sources.
2Measurement precision
If conventional thermal sensors are placed away from heat sources, then fabrication complexity is reduced, but measurement precision deteriorates due to inadequate proximity to hot spots
Solution Approach 1:
The patent creates local thermal sensing zones by placing CBJT sensors immediately adjacent to MBC transistor heat sources. Each CBJT is positioned at a specific location where thermal measurement is critical, with its fin-shaped structure and doped regions optimized for local temperature sensing. This local placement ensures high measurement precision without requiring long interconnects or centralized sensor locations.
3Productivity
If device packing density is increased with MBC transistors, then productivity is improved, but temperature increases causing performance deterioration
Solution Approach 1:
The integrated CBJT thermal sensors provide real-time temperature feedback from high-density MBC transistor regions. By placing sensors adjacent to heat sources, the system can monitor local temperature conditions and implement thermal management strategies to maintain performance in high-density configurations, enabling continued productivity improvements without thermal runaway.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The CBJT thermal sensor provides stable and accurate thermal measurements by being integrated with MBC transistors, reducing the need for additional fabrication steps and improving heat dissipation in high-density semiconductor devices.
Implementation Method 1
The voltage difference between the first potential and the second potential correlates to change of temperature
Data Source
AI summary
The present disclosure provides embodiments of semiconductor devices. In one embodiment, the semiconductor device includes a dielectric layer and a fin-shaped structure disposed over the dielectric layer. The fin-shaped structure includes a first p-type doped region, a second p-type doped region, and a third p-type doped region, and a first n-type doped region, a second n-type doped region, and a third n-type doped region interleaving the first p-type doped region, the second p-type doped region, and the third p-type doped region. The first p-type doped region, the third p-type doped region and the third n-type doped region are electrically coupled to a first potential. The second p-type doped region, the first n-type doped region and the second n-type doped region are electrically coupled to a second potential different from the first potential.