Cc-Structure Ternary Paraelectric for Low-Leakage Thin Dielectrics
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Solution Overview
Problem
As semiconductor devices become more integrated, the thinning of dielectric materials in these devices increases the likelihood of leakage current, necessitating a dielectric material with a high dielectric constant that minimizes leakage current while maintaining sufficient capacitance.
Innovation Solution
The development of ternary paraelectrics with a monoclinic crystal structure and a base-centered Cc lattice, specifically materials like Na2Nb4O11, which have a high dielectric constant of 150 to 250 and a bandgap energy greater than that of SrTiO3, thereby reducing leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the thickness of the dielectric is reduced to increase integration, then the capacitance density increases, but the leakage current increases
Solution Approach 1:
The patent changes the material parameters by developing a new paraelectric material composition (A2B4O11 system with specific element combinations) that achieves a dielectric constant of 150-250, significantly higher than conventional materials. This material parameter change allows maintaining sufficient capacitance with thinner films, thereby reducing leakage current while preserving integration density
Solution Approach 2:
The patent employs composite material strategy by creating a ternary paraelectric material system combining elements from Group 1 (A), Group 5 (B), and oxygen in specific ratios (A2B4O11). This composite approach enables simultaneous optimization of dielectric constant and bandgap energy, resolving the contradiction between thin film requirements and leakage prevention
2Quantity of substance
If the dielectric constant is increased to maintain capacitance, then the capacitance value increases, but the leakage current increases due to material limitations
Solution Approach 1:
The patent simultaneously optimizes two critical material parameters: dielectric constant (150-250) and bandgap energy (>3.2 eV). By changing the material composition parameters in the A2B4O11 system, it achieves high capacitance while the elevated bandgap energy inherently suppresses leakage current, breaking the traditional trade-off between capacitance and leakage
Solution Approach 2:
The patent replaces conventional dielectric materials with this new paraelectric material that offers superior electrical properties. The material's inherent high bandgap energy acts as a natural barrier against leakage current, eliminating the need for additional protective layers or complex structures that would otherwise be required to prevent leakage in high-capacitance materials
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These ternary paraelectrics effectively minimize leakage current while maintaining a high dielectric constant, ensuring stable operation and sufficient capacitance in highly integrated semiconductor devices like DRAM.
Implementation Method 1
a dielectric constant of 150 to 250
Implementation Method 2
relatively large bandgap energy
Data Source
AI summary
A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.