CCP and ICP Plasma Nitridation for Semiconductor Substrates
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Solution Overview
Problem
Current plasma nitridation methods face challenges in achieving high-dose nitrogen incorporation into semiconductor substrates without causing structural damage, as ion implantation methods lead to film loss and structural damage due to high-energy ion beams, while plasma processes may not provide sufficient ion energy for deep nitridation.
Innovation Solution
A method utilizing a combination of capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) sources in a plasma processing apparatus, with individually controlled RF sources to enhance ion energy and nitrogen penetration depth, allowing for a two-step process that reduces structural damage and increases nitridation efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If ion implantation method is used to achieve high-dose nitrogen incorporation, then nitrogen concentration in substrate is improved, but structural damage and film loss occur due to high-energy ion beams
Solution Approach 1:
The patent divides the nitridation process into two distinct steps: first using capacitively coupled plasma (CCP) to generate nitrogen species, then using inductively coupled plasma (ICP) to enhance ion energy for deeper penetration. This segmentation allows each plasma source to perform its optimal function without the drawbacks of using a single high-energy ion implantation method throughout the entire process.
Solution Approach 2:
The patent changes the energy parameters of ion beams dynamically by switching between two plasma coupling modes. The CCP phase uses lower ion energy to minimize damage, while the ICP phase increases ion energy to achieve deeper nitrogen penetration. This parameter change resolves the contradiction between achieving high nitrogen concentration and avoiding structural damage.
2Object-affected harmful factors
If plasma process is used to reduce structural damage, then substrate damage is minimized, but ion energy is insufficient for deep nitridation
Solution Approach 1:
The patent makes the ion energy dynamic by transitioning from a static low-energy plasma process to a two-phase process where ion energy is first low (CCP phase) to protect the substrate, then high (ICP phase) to achieve deep nitridation. This dynamic adjustment of energy levels resolves the contradiction between minimizing damage and achieving sufficient penetration depth.
Solution Approach 2:
The patent employs periodic action by alternating between two plasma generation modes in sequence. The CCP phase operates first to generate nitrogen species with minimal damage, followed by the ICP phase to enhance ion energy for deeper penetration. This periodic switching between different energy states allows the process to achieve both low damage and deep nitridation.
3Device complexity
If single plasma source is used for nitridation, then process simplicity is maintained, but independent control of ion energy and plasma density is limited
Solution Approach 1:
The patent makes the plasma processing system multi-functional by equipping it with two different plasma coupling capabilities (CCP and ICP) that can be activated in sequence. This allows the same processing chamber to perform both low-damage nitridation and high-penetration nitridation, providing versatile control over ion energy and plasma density while maintaining a single processing apparatus.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves high-dose nitrogen incorporation with reduced structural damage, enabling deeper nitridation and higher nitrogen concentration in the substrate, suitable for surface modification, hardmasking, or tuning the dielectric constant of insulating layers, while minimizing substrate damage.
Implementation Method 1
generating one or more species using a capacitively coupled plasma induced from a first process gas using a capacitively coupled plasma source
Implementation Method 2
exposing the workpiece to the one or more species generated using the capacitively coupled plasma from the first process gas to provide nitridation on the workpiece
Data Source
AI summary
Processes for providing nitridation on a workpiece, such as a semiconductor, are provided. In one example implementation, a method can include supporting a workpiece on a workpiece support. The method can include exposing the workpiece to species generated from a capacitively coupled plasma to provide nitridation on the workpiece. The method can also include exposing the workpiece to species generated form an inductively coupled plasma to provide nitridation on the workpiece.