Group II-VI Semiconductor Radiation Detector Dicing Angle
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Solution Overview
Problem
Radiation detectors based on group II-VI semiconductors like CdTe or CdxZn1−xTe suffer from edge effects due to internal electrical field distortions and high surface leakage currents, leading to reduced detection performance, which current guard ring structures fail to adequately address, especially in mass production contexts where mechanical defects from dicing processes are prevalent.
Innovation Solution
Dicing group II-VI semiconductor wafers at an angle θ (preferably between 30° and 60°, especially 45°, relative to the slip direction during half-cutting or full-cutting, to minimize defect progression and enhance uniformity of detection response across the entire detector surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If dicing is performed parallel to the slip direction, then the dicing process is simple and efficient, but mechanical defects such as large kerf width, chipping, and cracking occur at the side surface
Solution Approach 1:
The patent applies asymmetry by intentionally misaligning the dicing direction at a specific angle (30°-60°) relative to the slip direction, rather than cutting parallel to it. This asymmetric cutting angle prevents the formation of large kerf width, chipping, and cracking at the side surface while maintaining acceptable dicing efficiency.
2Productivity
If conventional dicing methods are used, then mass production is efficient, but edge effects occur due to internal electrical field distortion and high surface leakage current
Solution Approach 1:
The patent changes the critical parameter of dicing angle from the conventional parallel-to-slip-direction (0°) to a specific range (30°-60°). This parameter change reduces mechanical defects that cause internal electrical field distortion and surface leakage current, thereby improving detection performance uniformity across the detector surface while maintaining mass production efficiency.
3Manufacturing precision
If side surface polishing or etching is applied to individual detectors, then defects are reduced, but the process becomes complex and unsuitable for mass production
Solution Approach 1:
The patent performs the defect-prevention action during the dicing process itself by cutting at a specific angle (30°-60°) relative to the slip direction. This preliminary action prevents mechanical defects from forming in the first place, eliminating the need for subsequent side surface polishing or etching steps and keeping the mass production process simple.
Data Source
AI summary
An embodiment relates to a group II-VI semiconductor wafer of a radiation detector, and an embodiment relates to a method for producing same. An embodiment of the present invention provides a group II-VI semiconductor of a radiation detector enabling reduction or restriction of the edge effect (or the end surface effect) and a method for producing same. An embodiment of the present invention provides a radiation detector obtained by half-cutting or full-cutting a group II-VI semiconductor wafer having a zinc blende structure in which the wafer has a {001} plane main surface, and cut planes according to the half-cutting or full-cutting have an angle θ (≠0°) relative to the slip direction of the wafer.