Cell Circuit Biasing to Tune PUF and RNG Consistency
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Solution Overview
Problem
The contamination of electronic component supply chains by counterfeit hardware devices poses a significant risk due to vulnerabilities in encryption keys stored in fuses, which can be prone to visual and electrical probing attacks, and insider threats, necessitating improved device authentication methods.
Innovation Solution
The implementation of techniques to change the consistency behavior of cell circuits through stress mechanisms such as hot carrier injection (HCI) and biasing, allowing for the transformation of cell circuits between physically unclonable function (PUF) and random number generation (RNG) behaviors, enhancing authentication security.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If encryption keys are stored in fuses, then device authentication is provided, but the fuses are prone to visual and electrical probing attacks and insider threats
Solution Approach 1:
The patent converts the inherent physical variations in transistor manufacturing, which traditionally cause circuit inconsistency, into a beneficial security feature. By exploiting these variations in PUF circuits, the system generates unique cryptographic keys that are difficult to clone or predict, thereby transforming manufacturing imperfections into a defense against probing attacks and insider threats.
Solution Approach 2:
The patent dynamically changes the operational parameters of cell circuits by applying stress conditions such as hot carrier injection. This allows the same hardware circuit to exhibit different behavioral characteristics under different stress levels, enabling the system to switch between PUF mode (for secure key generation) and RNG mode (for random number generation), thereby enhancing security against static analysis and probing attacks.
2Reliability
If cell circuits are stressed to change behavior consistency, then authentication security is enhanced, but additional circuitry and control mechanisms are required
Solution Approach 1:
The patent designs cell circuits that can perform multiple functions depending on the applied stress conditions. The same basic circuit structure can operate as a PUF circuit for cryptographic key generation or as an RNG circuit for random number generation, simply by changing the stress conditions. This multi-functionality reduces the need for separate dedicated circuits for each function, thereby limiting the increase in overall device complexity.
3Reliability
If PUF behavior consistency is increased for security, then device authentication is strengthened, but the ability to generate random numbers is reduced
Solution Approach 1:
The patent implements dynamic control over cell circuit behavior by applying different stress conditions in real-time. The system can switch between PUF mode (with high consistency for authentication) and RNG mode (with high randomness for random number generation) based on operational requirements. This dynamic adaptability allows the same hardware to provide both strong authentication security and versatile functionality without compromising either aspect.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach strengthens device authentication by increasing the consistency of PUF behavior or randomness of RNG behavior, effectively counteracting counterfeiting and insider threats, thereby enhancing the security of electronic devices.
Implementation Method 1
techniques to change the consistency behavior of cell circuits through stress mechanisms such as hot carrier injection (HCI)
Implementation Method 2
stress mechanisms such as hot carrier injection (HCI) and biasing
Data Source
AI summary
Techniques and mechanisms for changing a consistency with which a cell circuit (“cell”) settles into a given state. In one embodiment, a cell settles into a preferred state based on a relative polarity between respective voltages of a first rail and a second rail. Based on the preferred state, a hot carrier injection (HCI) stress is applied to change a likelihood of the cell settling into the preferred state. Applying the HCI stress includes driving off-currents of two PMOS transistors of the cell while the relative polarity is reversed. In another embodiment, a cell array comprises multiple cells which are each classified as being a respective one of a physically unclonable function (PUF) type or a random number generator (RNG) type. A cell is selected for biasing, and a stress is applied, based on each of: that cell's preferred state, that cell's classification, and another cell's classification.


