Cell Region Patterning for Uniform Semiconductor Etch Features
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As the degree of integration of semiconductor devices increases, it becomes challenging to form uniform fine patterns in cell regions, particularly in cell center and edge regions, due to decreased pattern widths.
Innovation Solution
A method involving multiple patterning processes, including forming etch target layers, hard mask layers, sacrificial patterns, spacers, and protection patterns, to create edge and center mask patterns that allow for precise etching of uniform fine patterns in both cell center and edge regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the degree of integration is increased, then device density is improved, but pattern uniformity deteriorates
Solution Approach 1:
The cell region is divided into cell center region and cell edge region, with different mask patterns formed in each region. This segmentation allows independent optimization of patterning processes for each region, enabling uniform fine patterns to be formed throughout the entire cell region even as device density increases
Solution Approach 2:
Different mask patterns are specifically designed for different regions: edge mask patterns for the cell edge region and center mask patterns for the cell center region. This local quality approach ensures that each region receives the appropriate patterning treatment, maintaining pattern uniformity across the entire cell region while supporting higher device density
2Length of moving object
If pattern width is decreased, then device integration is improved, but pattern uniformity in cell region deteriorates
Solution Approach 1:
The cell region is segmented into cell center region and cell edge region, with separate mask patterning processes applied to each. This allows the pattern width to be uniformly controlled across the entire cell region even when the overall pattern dimensions are reduced for higher integration
Solution Approach 2:
Region-specific mask patterns are formed with local quality in mind: edge mask patterns address the specific challenges of the cell edge region while center mask patterns optimize the cell center region. This ensures uniform pattern formation across the entire cell region despite reduced pattern widths
3Manufacturing precision
If quadruple patterning process is used, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The complex quadruple patterning process is segmented into region-specific operations: forming edge mask patterns in the cell edge region and center mask patterns in the cell center region. This segmentation makes the complex process more manageable and enables precise control of fine patterns while reducing process variability
4Manufacturing precision
If etch masks are formed in cell edge region, then etch pattern uniformity is improved, but process complexity increases
Solution Approach 1:
The formation of edge mask patterns and center mask patterns is merged into a coordinated process sequence. By combining these patterning operations and using them together as etch masks, uniform etch patterns are achieved across the entire cell region while managing process complexity through integrated planning
Data Source
AI summary
A method of manufacturing a semiconductor device includes forming an etch target layer in a surface of a cell region comprising a cell center region and a cell edge region surrounding the cell center region, forming an edge mask pattern on the surface of the cell edge region through a quadruple patterning process on the etch target layer, and forming a plurality of center mask patterns spaced apart from each other on the cell center region, and forming a first etch pattern on the cell edge region by etching the etch target layer by using the edge mask pattern and the plurality of center mask patterns as etch masks and forming a plurality of second etch patterns spaced apart from each other on the cell center region.