Cellulose Nanocrystal Semiconductor Doping

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Solution Overview

Problem

Cellulose nanocrystals, despite their mechanical strength and biodegradability, are inherently nonconductive due to their large band gap, limiting their application in semiconductor materials.

Innovation Solution

Doping cellulose nanocrystals with electron withdrawing or donating groups, such as CF3SO2−, TFSI anions, or Ag-TFSA, to introduce holes or free electrons, respectively, thereby enhancing their conductivity and allowing them to function as semiconductor materials.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If cellulose nanocrystals are used as semiconductor material, then mechanical strength and biodegradability are improved, but electrical conductivity deteriorates due to large band gap

Engineering Contradiction:
Improvemechanical strengthVSAvoidelectrical conductivity
Core Design Contradiction:
StrengthVSReliability

Solution Approach 1:

The patent changes the electrical parameters of cellulose nanocrystals by introducing dopants (electron withdrawing groups or electron donating groups) to modify the band gap and create charge carriers (holes or free electrons), thereby transforming the material from nonconductive to conductive while preserving its mechanical properties

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite semiconductor material by combining cellulose nanocrystals with dopant molecules, forming a hybrid structure that integrates the mechanical strength of cellulose with the electrical conductivity provided by the dopant system

Inventive Principle:
Principle #40Composite materials

2Reliability

If doping process is applied to cellulose nanocrystal, then electrical conductivity is improved, but manufacturing complexity increases

Engineering Contradiction:
Improveelectrical conductivityVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent performs preliminary action by pre-synthesizing dopant solutions with controlled concentrations and preparing cellulose nanocrystal suspensions beforehand, then combining them in a simple mixing process that avoids complex in-situ doping procedures

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent simplifies the doping process by controlling it as a parameter change through straightforward mixing of dopant solution with cellulose nanocrystal suspension, using adjustable parameters like dopant concentration (0.1-10 mM) and mixing time rather than complex multi-step procedures

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The doping process successfully converts nonconductive cellulose nanocrystals into p-type or n-type semiconductor materials, enabling their use in electronic applications while maintaining chemical stability and mechanical properties.

Implementation Method 1

Doping cellulose nanocrystals with electron withdrawing or donating groups, such as CF3SO2−, TFSI anions, or Ag-TFSA, to introduce holes or free electrons, respectively, thereby enhancing their conductivity

Methodology Applied
Scientific EffectDoping: Dopants

Data Source

PatentUS11393981B2Method of manufacturing a cellulose nanocrystal semiconductor material
Publication Date: 2022.07.19 ELECTRONICS & TELECOMM RES INST
  • US11393981B2 patent drawing
  • US11393981B2 patent drawing
  • US11393981B2 patent drawing

AI summary

The present disclosure relates to a method of manufacturing a semiconductor material including a cellulose nanocrystal. Particularly, according to the present disclosure, by attaching an electron withdrawing group to the surface of the cellulose nanocrystal, which is a nonconductor, holes are formed in the doped cellulose nanocrystal, and the cellulose nanocrystal may be used as a semiconductor material.